Effect of substitutional nitrogen incorporation on electron emission from CVD diamond

M. Park, W. B. Choi, R. Schlesser, A. T. Sowers, L. Bergman, Robert Nemanich, Z. Sitar, J. J. Hren, J. J. Cuomo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Nitrogen-doped CVD diamond films with varying substitutional nitrogen content were prepared. Relatively large amounts of substitutional nitrogen were successfully incorporated into the growing diamond without degrading the quality of the diamond when melamine (C3H6N6) was used as a dopant precursor. It was found that substitutional nitrogen doping has a negligible effect on the electron emission properties of the CVD diamond films. Field emission characteristics from diamond powder coated emitters were also investigated. The effect of substitutional nitrogen incorporation on field emission from diamond is discussed.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages269-270
Number of pages2
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: Jul 19 1998Jul 24 1998

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period7/19/987/24/98

ASJC Scopus subject areas

  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Effect of substitutional nitrogen incorporation on electron emission from CVD diamond'. Together they form a unique fingerprint.

  • Cite this

    Park, M., Choi, W. B., Schlesser, R., Sowers, A. T., Bergman, L., Nemanich, R., Sitar, Z., Hren, J. J., & Cuomo, J. J. (1998). Effect of substitutional nitrogen incorporation on electron emission from CVD diamond. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 269-270). IEEE.