Effect of substitutional nitrogen incorporation on electron emission from CVD diamond

M. Park; W. B. Choi; R. Schlesser; A. T. Sowers; L. Bergman; Robert Nemanich; Z. Sitar; J. J. Hren; J. J. Cuomo

Effect of substitutional nitrogen incorporation on electron emission from CVD diamond

M. Park, W. B. Choi, R. Schlesser, A. T. Sowers, L. Bergman, Robert Nemanich, Z. Sitar, J. J. Hren, J. J. Cuomo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nitrogen-doped CVD diamond films with varying substitutional nitrogen content were prepared. Relatively large amounts of substitutional nitrogen were successfully incorporated into the growing diamond without degrading the quality of the diamond when melamine (C₃H₆N₆) was used as a dopant precursor. It was found that substitutional nitrogen doping has a negligible effect on the electron emission properties of the CVD diamond films. Field emission characteristics from diamond powder coated emitters were also investigated. The effect of substitutional nitrogen incorporation on field emission from diamond is discussed.

Original language	English (US)
Title of host publication	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	269-270
Number of pages	2
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: Jul 19 1998 → Jul 24 1998

Other

Other	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
City	Asheville, NC, USA
Period	7/19/98 → 7/24/98

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

Park, M, Choi, WB, Schlesser, R, Sowers, AT, Bergman, L, Nemanich, R, Sitar, Z, Hren, JJ & Cuomo, JJ 1998, Effect of substitutional nitrogen incorporation on electron emission from CVD diamond. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 269-270, Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 7/19/98.

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title = "Effect of substitutional nitrogen incorporation on electron emission from CVD diamond",

abstract = "Nitrogen-doped CVD diamond films with varying substitutional nitrogen content were prepared. Relatively large amounts of substitutional nitrogen were successfully incorporated into the growing diamond without degrading the quality of the diamond when melamine (C3H6N6) was used as a dopant precursor. It was found that substitutional nitrogen doping has a negligible effect on the electron emission properties of the CVD diamond films. Field emission characteristics from diamond powder coated emitters were also investigated. The effect of substitutional nitrogen incorporation on field emission from diamond is discussed.",

author = "M. Park and Choi, {W. B.} and R. Schlesser and Sowers, {A. T.} and L. Bergman and Robert Nemanich and Z. Sitar and Hren, {J. J.} and Cuomo, {J. J.}",

year = "1998",

language = "English (US)",

pages = "269--270",

booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",

publisher = "IEEE",

note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

}

TY - GEN

T1 - Effect of substitutional nitrogen incorporation on electron emission from CVD diamond

AU - Park, M.

AU - Choi, W. B.

AU - Schlesser, R.

AU - Sowers, A. T.

AU - Bergman, L.

AU - Nemanich, Robert

AU - Sitar, Z.

AU - Hren, J. J.

AU - Cuomo, J. J.

PY - 1998

Y1 - 1998

N2 - Nitrogen-doped CVD diamond films with varying substitutional nitrogen content were prepared. Relatively large amounts of substitutional nitrogen were successfully incorporated into the growing diamond without degrading the quality of the diamond when melamine (C3H6N6) was used as a dopant precursor. It was found that substitutional nitrogen doping has a negligible effect on the electron emission properties of the CVD diamond films. Field emission characteristics from diamond powder coated emitters were also investigated. The effect of substitutional nitrogen incorporation on field emission from diamond is discussed.

AB - Nitrogen-doped CVD diamond films with varying substitutional nitrogen content were prepared. Relatively large amounts of substitutional nitrogen were successfully incorporated into the growing diamond without degrading the quality of the diamond when melamine (C3H6N6) was used as a dopant precursor. It was found that substitutional nitrogen doping has a negligible effect on the electron emission properties of the CVD diamond films. Field emission characteristics from diamond powder coated emitters were also investigated. The effect of substitutional nitrogen incorporation on field emission from diamond is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0032315681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032315681&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032315681

SP - 269

EP - 270

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC

Y2 - 19 July 1998 through 24 July 1998

ER -

Effect of substitutional nitrogen incorporation on electron emission from CVD diamond

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