Effect of stoichiometry on oxygen incorporation in MgB2 thin films

Rakesh Singh; Y. Shen; R. Gandikota; J. M. Rowell; Nathan Newman

doi:10.1088/0953-2048/21/01/015018

Effect of stoichiometry on oxygen incorporation in MgB₂ thin films

Rakesh Singh, Y. Shen, R. Gandikota, J. M. Rowell, Nathan Newman

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The amount of oxygen incorporated into MgB₂ thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectrometry was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg_0.9B₂ to Mg _1.1B₂. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg-rich films and in films exposed to humid atmospheres.

Original language	English (US)
Article number	015018
Journal	Superconductor Science and Technology
Volume	21
Issue number	1
DOIs	https://doi.org/10.1088/0953-2048/21/01/015018
State	Published - Jan 1 2008

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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title = "Effect of stoichiometry on oxygen incorporation in MgB2 thin films",

abstract = "The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectrometry was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg 1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg-rich films and in films exposed to humid atmospheres.",

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T1 - Effect of stoichiometry on oxygen incorporation in MgB2 thin films

AU - Singh, Rakesh

AU - Shen, Y.

AU - Gandikota, R.

AU - Rowell, J. M.

AU - Newman, Nathan

PY - 2008/1/1

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N2 - The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectrometry was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg 1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg-rich films and in films exposed to humid atmospheres.

AB - The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectrometry was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg 1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg-rich films and in films exposed to humid atmospheres.

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Effect of stoichiometry on oxygen incorporation in MgB₂ thin films

Abstract

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