Abstract

The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectrometry was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg 1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg-rich films and in films exposed to humid atmospheres.

Original languageEnglish (US)
Article number015018
JournalSuperconductor Science and Technology
Volume21
Issue number1
DOIs
StatePublished - Jan 1 2008

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Stoichiometry
stoichiometry
Oxygen
Thin films
oxygen
thin films
atmospheres
Rutherford backscattering spectroscopy
Spectrometry
backscattering
contamination
Contamination
air
Air
Chemical analysis
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Effect of stoichiometry on oxygen incorporation in MgB2 thin films. / Singh, Rakesh; Shen, Y.; Gandikota, R.; Rowell, J. M.; Newman, Nathan.

In: Superconductor Science and Technology, Vol. 21, No. 1, 015018, 01.01.2008.

Research output: Contribution to journalArticle

Singh, Rakesh ; Shen, Y. ; Gandikota, R. ; Rowell, J. M. ; Newman, Nathan. / Effect of stoichiometry on oxygen incorporation in MgB2 thin films. In: Superconductor Science and Technology. 2008 ; Vol. 21, No. 1.
@article{70db57a2930646fdbe2b73ec97cb509e,
title = "Effect of stoichiometry on oxygen incorporation in MgB2 thin films",
abstract = "The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectrometry was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg 1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg-rich films and in films exposed to humid atmospheres.",
author = "Rakesh Singh and Y. Shen and R. Gandikota and Rowell, {J. M.} and Nathan Newman",
year = "2008",
month = "1",
day = "1",
doi = "10.1088/0953-2048/21/01/015018",
language = "English (US)",
volume = "21",
journal = "Superconductor Science and Technology",
issn = "0953-2048",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Effect of stoichiometry on oxygen incorporation in MgB2 thin films

AU - Singh, Rakesh

AU - Shen, Y.

AU - Gandikota, R.

AU - Rowell, J. M.

AU - Newman, Nathan

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectrometry was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg 1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg-rich films and in films exposed to humid atmospheres.

AB - The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectrometry was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg 1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg-rich films and in films exposed to humid atmospheres.

UR - http://www.scopus.com/inward/record.url?scp=37549026822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37549026822&partnerID=8YFLogxK

U2 - 10.1088/0953-2048/21/01/015018

DO - 10.1088/0953-2048/21/01/015018

M3 - Article

VL - 21

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

SN - 0953-2048

IS - 1

M1 - 015018

ER -