Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Lu Liu, Tsung Sheng Kang, David A. Cullen, Lin Zhou, Jinhyung Kim, Chih Yang Chang, Erica A. Douglas, Soohwan Jang, David Smith, S. J. Pearton, Wayne J. Johnson, Fan Ren

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