Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Lu Liu, Tsung Sheng Kang, David A. Cullen, Lin Zhou, Jinhyung Kim, Chih Yang Chang, Erica A. Douglas, Soohwan Jang, David Smith, S. J. Pearton, Wayne J. Johnson, Fan Ren

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The effects of source field plates on AlGaN/GaN high electron mobility transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55 to 155 V and the critical voltage for off-state gate stress from 40 to 65 V, relative to devices without the field plate. Transmission electron microscopy was used to examine the degradation of the gate contacts. The presence of pits that appeared on both source and drain sides of the gate edges was attributed to the inverse piezoelectric effect. In addition, a thin oxide layer was observed between the Ni gate contact and the AlGaN layer, and both Ni and oxygen had diffused into the AlGaN layer. After step-stress cycling, additional threading dislocations were observed.

Original languageEnglish (US)
Article number032204
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number3
DOIs
StatePublished - 2011

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High electron mobility transistors
high electron mobility transistors
cycles
Piezoelectricity
Electric breakdown
electrical faults
Oxides
degradation
Oxygen
Transmission electron microscopy
Degradation
transmission electron microscopy
oxides
aluminum gallium nitride
Electric potential
electric potential
oxygen

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors. / Liu, Lu; Kang, Tsung Sheng; Cullen, David A.; Zhou, Lin; Kim, Jinhyung; Chang, Chih Yang; Douglas, Erica A.; Jang, Soohwan; Smith, David; Pearton, S. J.; Johnson, Wayne J.; Ren, Fan.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, No. 3, 032204, 2011.

Research output: Contribution to journalArticle

Liu, Lu ; Kang, Tsung Sheng ; Cullen, David A. ; Zhou, Lin ; Kim, Jinhyung ; Chang, Chih Yang ; Douglas, Erica A. ; Jang, Soohwan ; Smith, David ; Pearton, S. J. ; Johnson, Wayne J. ; Ren, Fan. / Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2011 ; Vol. 29, No. 3.
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AU - Zhou, Lin

AU - Kim, Jinhyung

AU - Chang, Chih Yang

AU - Douglas, Erica A.

AU - Jang, Soohwan

AU - Smith, David

AU - Pearton, S. J.

AU - Johnson, Wayne J.

AU - Ren, Fan

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