Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Lu Liu; Tsung Sheng Kang; David A. Cullen; Lin Zhou; Jinhyung Kim; Chih Yang Chang; Erica A. Douglas; Soohwan Jang; David Smith; S. J. Pearton; Wayne J. Johnson; Fan Ren

doi:10.1116/1.3581078

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Lu Liu, Tsung Sheng Kang, David A. Cullen, Lin Zhou, Jinhyung Kim, Chih Yang Chang, Erica A. Douglas, Soohwan Jang, David Smith, S. J. Pearton, Wayne J. Johnson, Fan Ren

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Abstract

The effects of source field plates on AlGaN/GaN high electron mobility transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55 to 155 V and the critical voltage for off-state gate stress from 40 to 65 V, relative to devices without the field plate. Transmission electron microscopy was used to examine the degradation of the gate contacts. The presence of pits that appeared on both source and drain sides of the gate edges was attributed to the inverse piezoelectric effect. In addition, a thin oxide layer was observed between the Ni gate contact and the AlGaN layer, and both Ni and oxygen had diffused into the AlGaN layer. After step-stress cycling, additional threading dislocations were observed.

Original language	English (US)
Article number	032204
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	3
DOIs	https://doi.org/10.1116/1.3581078
State	Published - May 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Liu, L., Kang, T. S., Cullen, D. A., Zhou, L., Kim, J., Chang, C. Y., Douglas, E. A., Jang, S., Smith, D., Pearton, S. J., Johnson, W. J., & Ren, F. (2011). Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science and Technology B, 29(3), [032204]. https://doi.org/10.1116/1.3581078

@article{3474de5dfbd5483f81fb3d7874fb1bcf,

title = "Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors",

abstract = "The effects of source field plates on AlGaN/GaN high electron mobility transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55 to 155 V and the critical voltage for off-state gate stress from 40 to 65 V, relative to devices without the field plate. Transmission electron microscopy was used to examine the degradation of the gate contacts. The presence of pits that appeared on both source and drain sides of the gate edges was attributed to the inverse piezoelectric effect. In addition, a thin oxide layer was observed between the Ni gate contact and the AlGaN layer, and both Ni and oxygen had diffused into the AlGaN layer. After step-stress cycling, additional threading dislocations were observed.",

author = "Lu Liu and Kang, {Tsung Sheng} and Cullen, {David A.} and Lin Zhou and Jinhyung Kim and Chang, {Chih Yang} and Douglas, {Erica A.} and Soohwan Jang and David Smith and Pearton, {S. J.} and Johnson, {Wayne J.} and Fan Ren",

note = "Funding Information: The work performed at UF was supported by a (U.S.) AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt, and the work carried out at Arizona State University was supported by an AFRL Contract No. FA8650-08-C-1395 monitored by Chris Bozada. The authors also acknowledge the use of microscopy facilities in The John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University",

year = "2011",

month = may,

doi = "10.1116/1.3581078",

language = "English (US)",

volume = "29",

journal = "Journal of Vacuum Science and Technology B",

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T1 - Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

AU - Liu, Lu

AU - Kang, Tsung Sheng

AU - Cullen, David A.

AU - Zhou, Lin

AU - Kim, Jinhyung

AU - Chang, Chih Yang

AU - Douglas, Erica A.

AU - Jang, Soohwan

AU - Smith, David

AU - Pearton, S. J.

AU - Johnson, Wayne J.

AU - Ren, Fan

N1 - Funding Information: The work performed at UF was supported by a (U.S.) AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt, and the work carried out at Arizona State University was supported by an AFRL Contract No. FA8650-08-C-1395 monitored by Chris Bozada. The authors also acknowledge the use of microscopy facilities in The John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University

PY - 2011/5

Y1 - 2011/5

N2 - The effects of source field plates on AlGaN/GaN high electron mobility transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55 to 155 V and the critical voltage for off-state gate stress from 40 to 65 V, relative to devices without the field plate. Transmission electron microscopy was used to examine the degradation of the gate contacts. The presence of pits that appeared on both source and drain sides of the gate edges was attributed to the inverse piezoelectric effect. In addition, a thin oxide layer was observed between the Ni gate contact and the AlGaN layer, and both Ni and oxygen had diffused into the AlGaN layer. After step-stress cycling, additional threading dislocations were observed.

AB - The effects of source field plates on AlGaN/GaN high electron mobility transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55 to 155 V and the critical voltage for off-state gate stress from 40 to 65 V, relative to devices without the field plate. Transmission electron microscopy was used to examine the degradation of the gate contacts. The presence of pits that appeared on both source and drain sides of the gate edges was attributed to the inverse piezoelectric effect. In addition, a thin oxide layer was observed between the Ni gate contact and the AlGaN layer, and both Ni and oxygen had diffused into the AlGaN layer. After step-stress cycling, additional threading dislocations were observed.

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Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

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