Effect of single vs. multiple implant processing on defect types and densities in SIMOX

D. Venables, Stephen Krause, J. C. Park, J. D. Lee, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The origin and characteristics of the defect structures in contemporary SIMOX are described here and how their densities are controlled by the processing method and conditions. The three defect types in SIMOX which are through-thickness defect pairs, partial-thickness defects, and at the buried oxide interface, stacking fault pyramids, occur in both multiple and single implant material.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages48-49
Number of pages2
StatePublished - 1993
EventProceedings of the IEEE International SOI Conference - Palm Springs, CA, USA
Duration: Oct 5 1993Oct 7 1993

Other

OtherProceedings of the IEEE International SOI Conference
CityPalm Springs, CA, USA
Period10/5/9310/7/93

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Venables, D., Krause, S., Park, J. C., Lee, J. D., & Roitman, P. (1993). Effect of single vs. multiple implant processing on defect types and densities in SIMOX. In IEEE International SOI Conference (pp. 48-49). Publ by IEEE.