Effect of single vs. multiple implant processing on defect types and densities in SIMOX

D. Venables; Stephen Krause; J. C. Park; J. D. Lee; P. Roitman

Effect of single vs. multiple implant processing on defect types and densities in SIMOX

D. Venables, Stephen Krause, J. C. Park, J. D. Lee, P. Roitman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The origin and characteristics of the defect structures in contemporary SIMOX are described here and how their densities are controlled by the processing method and conditions. The three defect types in SIMOX which are through-thickness defect pairs, partial-thickness defects, and at the buried oxide interface, stacking fault pyramids, occur in both multiple and single implant material.

Original language	English (US)
Title of host publication	IEEE International SOI Conference
Place of Publication	Piscataway, NJ, United States
Publisher	Publ by IEEE
Pages	48-49
Number of pages	2
State	Published - 1993
Event	Proceedings of the IEEE International SOI Conference - Palm Springs, CA, USA Duration: Oct 5 1993 → Oct 7 1993

Other

Other	Proceedings of the IEEE International SOI Conference
City	Palm Springs, CA, USA
Period	10/5/93 → 10/7/93

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@inproceedings{5614a4c05f02432795c533fdce07b84c,

title = "Effect of single vs. multiple implant processing on defect types and densities in SIMOX",

abstract = "The origin and characteristics of the defect structures in contemporary SIMOX are described here and how their densities are controlled by the processing method and conditions. The three defect types in SIMOX which are through-thickness defect pairs, partial-thickness defects, and at the buried oxide interface, stacking fault pyramids, occur in both multiple and single implant material.",

author = "D. Venables and Stephen Krause and Park, {J. C.} and Lee, {J. D.} and P. Roitman",

year = "1993",

language = "English (US)",

pages = "48--49",

booktitle = "IEEE International SOI Conference",

publisher = "Publ by IEEE",

note = "Proceedings of the IEEE International SOI Conference ; Conference date: 05-10-1993 Through 07-10-1993",

}

TY - GEN

T1 - Effect of single vs. multiple implant processing on defect types and densities in SIMOX

AU - Venables, D.

AU - Krause, Stephen

AU - Park, J. C.

AU - Lee, J. D.

AU - Roitman, P.

PY - 1993

Y1 - 1993

N2 - The origin and characteristics of the defect structures in contemporary SIMOX are described here and how their densities are controlled by the processing method and conditions. The three defect types in SIMOX which are through-thickness defect pairs, partial-thickness defects, and at the buried oxide interface, stacking fault pyramids, occur in both multiple and single implant material.

AB - The origin and characteristics of the defect structures in contemporary SIMOX are described here and how their densities are controlled by the processing method and conditions. The three defect types in SIMOX which are through-thickness defect pairs, partial-thickness defects, and at the buried oxide interface, stacking fault pyramids, occur in both multiple and single implant material.

UR - http://www.scopus.com/inward/record.url?scp=0027857025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027857025&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027857025

SP - 48

EP - 49

BT - IEEE International SOI Conference

PB - Publ by IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the IEEE International SOI Conference

Y2 - 5 October 1993 through 7 October 1993

ER -

Effect of single vs. multiple implant processing on defect types and densities in SIMOX

Abstract

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ASJC Scopus subject areas

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