Abstract
A single-step, high-oxygen-concentration anneal has beneficial internal-thermal-oxidation (ITOX) effects on buried oxide (BOX) microstructure similar to those achieved with the two-step ITOX method. It has also been shown that the single-step, high oxygen-concentration anneal is an effective treatment on post-implant-amorphized, low-dose separation by implantation of oxygen (SIMOX) for improving the BOX uniformity, as well as the reduction and possible elimination of stacking fault pyramid defects located at the upper BOX interface.
| Original language | English (US) |
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| Title of host publication | IEEE International SOI Conference |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 123-124 |
| Number of pages | 2 |
| State | Published - 1999 |
| Event | The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference - Rohnert Park, CA, USA Duration: Oct 4 1999 → Oct 7 1999 |
Other
| Other | The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference |
|---|---|
| City | Rohnert Park, CA, USA |
| Period | 10/4/99 → 10/7/99 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering