Effect of single-step, high-oxygen-concentration annealing on buried oxide layer microstructure in post-implant-amorphized, low-dose SIMOX material

L. Chen, S. Bagchi, Stephen Krause, P. R. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A single-step, high-oxygen-concentration anneal has beneficial internal-thermal-oxidation (ITOX) effects on buried oxide (BOX) microstructure similar to those achieved with the two-step ITOX method. It has also been shown that the single-step, high oxygen-concentration anneal is an effective treatment on post-implant-amorphized, low-dose separation by implantation of oxygen (SIMOX) for improving the BOX uniformity, as well as the reduction and possible elimination of stacking fault pyramid defects located at the upper BOX interface.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages123-124
Number of pages2
StatePublished - 1999
EventThe 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference - Rohnert Park, CA, USA
Duration: Oct 4 1999Oct 7 1999

Other

OtherThe 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference
CityRohnert Park, CA, USA
Period10/4/9910/7/99

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chen, L., Bagchi, S., Krause, S., & Roitman, P. R. (1999). Effect of single-step, high-oxygen-concentration annealing on buried oxide layer microstructure in post-implant-amorphized, low-dose SIMOX material. In IEEE International SOI Conference (pp. 123-124). IEEE.