Effect of Si addition on the reaction growth and morphology of an aluminide compound in Al-Cu-Si/Ti-W bilayers

M. Park, Stephen Krause, S. R. Wilson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of the addition of Si to an al alloy on the reaction morphology of al12W in Al-Cu-Si/Ti-W bilayers was studied with plan-view and cross-section transmission electron microscopy (TEM). The addition of 0.5 wt.% Si to an Al-0.5Cu alloy film increases multiple spiked growths of the al12W compound by the reaction of the Al-0.5Cu-0.5Si film with the Ti-W sublayer after heat treatment at 450°C for 30 min. Increasing the Cu and Si content from 0.5 to 1.5% significantly reduced the spiked growth of al12 into the al-1.5Cu-1.5Si film. However the spike number density remained high compared to the reaction of a binary Al-1.5Cu film with the Ti-W layers. The results indicates that the addition of Si to form a ternary Al-Cu-Si film results in a more irregular, less planar Al12W morphology. This morphology can have a detrimental effect on thermal stability and electromigration resistance.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsHarry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages645-648
Number of pages4
Volume280
ISBN (Print)1558991751
StatePublished - 1993
EventProceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Other

OtherProceedings of the 1992 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/30/9212/4/92

Fingerprint

Electromigration
Thermodynamic stability
Heat treatment
Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Park, M., Krause, S., & Wilson, S. R. (1993). Effect of Si addition on the reaction growth and morphology of an aluminide compound in Al-Cu-Si/Ti-W bilayers. In H. A. Atwater, E. Chason, M. H. Grabow, & M. G. Lagally (Eds.), Materials Research Society Symposium Proceedings (Vol. 280, pp. 645-648). Pittsburgh, PA, United States: Publ by Materials Research Society.

Effect of Si addition on the reaction growth and morphology of an aluminide compound in Al-Cu-Si/Ti-W bilayers. / Park, M.; Krause, Stephen; Wilson, S. R.

Materials Research Society Symposium Proceedings. ed. / Harry A. Atwater; Eric Chason; Marcia H. Grabow; Max G. Lagally. Vol. 280 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 645-648.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, M, Krause, S & Wilson, SR 1993, Effect of Si addition on the reaction growth and morphology of an aluminide compound in Al-Cu-Si/Ti-W bilayers. in HA Atwater, E Chason, MH Grabow & MG Lagally (eds), Materials Research Society Symposium Proceedings. vol. 280, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 645-648, Proceedings of the 1992 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/30/92.
Park M, Krause S, Wilson SR. Effect of Si addition on the reaction growth and morphology of an aluminide compound in Al-Cu-Si/Ti-W bilayers. In Atwater HA, Chason E, Grabow MH, Lagally MG, editors, Materials Research Society Symposium Proceedings. Vol. 280. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 645-648
Park, M. ; Krause, Stephen ; Wilson, S. R. / Effect of Si addition on the reaction growth and morphology of an aluminide compound in Al-Cu-Si/Ti-W bilayers. Materials Research Society Symposium Proceedings. editor / Harry A. Atwater ; Eric Chason ; Marcia H. Grabow ; Max G. Lagally. Vol. 280 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 645-648
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abstract = "The effect of the addition of Si to an al alloy on the reaction morphology of al12W in Al-Cu-Si/Ti-W bilayers was studied with plan-view and cross-section transmission electron microscopy (TEM). The addition of 0.5 wt.{\%} Si to an Al-0.5Cu alloy film increases multiple spiked growths of the al12W compound by the reaction of the Al-0.5Cu-0.5Si film with the Ti-W sublayer after heat treatment at 450°C for 30 min. Increasing the Cu and Si content from 0.5 to 1.5{\%} significantly reduced the spiked growth of al12 into the al-1.5Cu-1.5Si film. However the spike number density remained high compared to the reaction of a binary Al-1.5Cu film with the Ti-W layers. The results indicates that the addition of Si to form a ternary Al-Cu-Si film results in a more irregular, less planar Al12W morphology. This morphology can have a detrimental effect on thermal stability and electromigration resistance.",
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