Effect of Proton Radiation on Ultra-Wide Bandgap AlN Schottky Barrier Diodes

Jossue Montes, Tsung Han Yang, Houqiang Fu, Hong Chen, Xuanqi Huang, Kai Fu, Izak Baranowski, Yuji Zhao

Research output: Contribution to journalArticle

Abstract

Lateral Pd/n-AlN Schottky barrier diodes (SBDs) were fabricated and subjected to 3 MeV proton irradiation at various fluences. Electrical and material characterization analysis was performed before and after each radiation fluence to quantify the change in device characteristics. It was found that the SBDs performed reliably up to a proton irradiation fluence of 5×1013 cm-2, with little or no change in the key device performance such as current, turn-on voltage, ideality factor, and breakdown voltage, etc. The electrical characteristics of the SBDs was well predicted using a standard thermionic emission theory. The performance of the SBDs showed a significant degradation after a high-fluence irritation of 5×1015 cm-2, where the current of the SBDs dropped two orders of magnitude. Material and surface characterizations, including atomic force microscopy and X-ray diffraction, indicated a consistent degradation in the AlN bulk crystal quality and a drastic increase in surface roughness. These results provide valuable information on the radiation properties of AlN electronics and can serve as important references for the future development of high performance AlN devices for extreme environment applications.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Jan 1 2018

Fingerprint

Schottky barrier diodes
Schottky diodes
Protons
Energy gap
fluence
Radiation
protons
radiation
Proton irradiation
proton irradiation
irritation
degradation
Thermionic emission
Degradation
thermionic emission
Electric breakdown
electrical faults
Atomic force microscopy
surface roughness
Electronic equipment

Keywords

  • Aluminum nitride
  • Aluminum nitride
  • barrier height
  • breakdown voltage
  • ideality factor
  • III-V semiconductor materials
  • leakage current
  • Performance evaluation
  • Protons
  • Radiation effects
  • radiation effects
  • Schottky barrier diodes
  • Schottky barriers
  • surface roughness
  • Temperature
  • turn on voltage

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Effect of Proton Radiation on Ultra-Wide Bandgap AlN Schottky Barrier Diodes. / Montes, Jossue; Yang, Tsung Han; Fu, Houqiang; Chen, Hong; Huang, Xuanqi; Fu, Kai; Baranowski, Izak; Zhao, Yuji.

In: IEEE Transactions on Nuclear Science, 01.01.2018.

Research output: Contribution to journalArticle

Montes, Jossue ; Yang, Tsung Han ; Fu, Houqiang ; Chen, Hong ; Huang, Xuanqi ; Fu, Kai ; Baranowski, Izak ; Zhao, Yuji. / Effect of Proton Radiation on Ultra-Wide Bandgap AlN Schottky Barrier Diodes. In: IEEE Transactions on Nuclear Science. 2018.
@article{62885ba3722744dcbf7c14a99cb251f2,
title = "Effect of Proton Radiation on Ultra-Wide Bandgap AlN Schottky Barrier Diodes",
abstract = "Lateral Pd/n-AlN Schottky barrier diodes (SBDs) were fabricated and subjected to 3 MeV proton irradiation at various fluences. Electrical and material characterization analysis was performed before and after each radiation fluence to quantify the change in device characteristics. It was found that the SBDs performed reliably up to a proton irradiation fluence of 5×1013 cm-2, with little or no change in the key device performance such as current, turn-on voltage, ideality factor, and breakdown voltage, etc. The electrical characteristics of the SBDs was well predicted using a standard thermionic emission theory. The performance of the SBDs showed a significant degradation after a high-fluence irritation of 5×1015 cm-2, where the current of the SBDs dropped two orders of magnitude. Material and surface characterizations, including atomic force microscopy and X-ray diffraction, indicated a consistent degradation in the AlN bulk crystal quality and a drastic increase in surface roughness. These results provide valuable information on the radiation properties of AlN electronics and can serve as important references for the future development of high performance AlN devices for extreme environment applications.",
keywords = "Aluminum nitride, Aluminum nitride, barrier height, breakdown voltage, ideality factor, III-V semiconductor materials, leakage current, Performance evaluation, Protons, Radiation effects, radiation effects, Schottky barrier diodes, Schottky barriers, surface roughness, Temperature, turn on voltage",
author = "Jossue Montes and Yang, {Tsung Han} and Houqiang Fu and Hong Chen and Xuanqi Huang and Kai Fu and Izak Baranowski and Yuji Zhao",
year = "2018",
month = "1",
day = "1",
doi = "10.1109/TNS.2018.2883400",
language = "English (US)",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Effect of Proton Radiation on Ultra-Wide Bandgap AlN Schottky Barrier Diodes

AU - Montes, Jossue

AU - Yang, Tsung Han

AU - Fu, Houqiang

AU - Chen, Hong

AU - Huang, Xuanqi

AU - Fu, Kai

AU - Baranowski, Izak

AU - Zhao, Yuji

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Lateral Pd/n-AlN Schottky barrier diodes (SBDs) were fabricated and subjected to 3 MeV proton irradiation at various fluences. Electrical and material characterization analysis was performed before and after each radiation fluence to quantify the change in device characteristics. It was found that the SBDs performed reliably up to a proton irradiation fluence of 5×1013 cm-2, with little or no change in the key device performance such as current, turn-on voltage, ideality factor, and breakdown voltage, etc. The electrical characteristics of the SBDs was well predicted using a standard thermionic emission theory. The performance of the SBDs showed a significant degradation after a high-fluence irritation of 5×1015 cm-2, where the current of the SBDs dropped two orders of magnitude. Material and surface characterizations, including atomic force microscopy and X-ray diffraction, indicated a consistent degradation in the AlN bulk crystal quality and a drastic increase in surface roughness. These results provide valuable information on the radiation properties of AlN electronics and can serve as important references for the future development of high performance AlN devices for extreme environment applications.

AB - Lateral Pd/n-AlN Schottky barrier diodes (SBDs) were fabricated and subjected to 3 MeV proton irradiation at various fluences. Electrical and material characterization analysis was performed before and after each radiation fluence to quantify the change in device characteristics. It was found that the SBDs performed reliably up to a proton irradiation fluence of 5×1013 cm-2, with little or no change in the key device performance such as current, turn-on voltage, ideality factor, and breakdown voltage, etc. The electrical characteristics of the SBDs was well predicted using a standard thermionic emission theory. The performance of the SBDs showed a significant degradation after a high-fluence irritation of 5×1015 cm-2, where the current of the SBDs dropped two orders of magnitude. Material and surface characterizations, including atomic force microscopy and X-ray diffraction, indicated a consistent degradation in the AlN bulk crystal quality and a drastic increase in surface roughness. These results provide valuable information on the radiation properties of AlN electronics and can serve as important references for the future development of high performance AlN devices for extreme environment applications.

KW - Aluminum nitride

KW - Aluminum nitride

KW - barrier height

KW - breakdown voltage

KW - ideality factor

KW - III-V semiconductor materials

KW - leakage current

KW - Performance evaluation

KW - Protons

KW - Radiation effects

KW - radiation effects

KW - Schottky barrier diodes

KW - Schottky barriers

KW - surface roughness

KW - Temperature

KW - turn on voltage

UR - http://www.scopus.com/inward/record.url?scp=85057830434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057830434&partnerID=8YFLogxK

U2 - 10.1109/TNS.2018.2883400

DO - 10.1109/TNS.2018.2883400

M3 - Article

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

ER -