Effect of process parameter variation in deposited emitter and buffer layers on the performance of silicon heterojunction solar cells

Ujjwal Das, Stuart Bowden, Michael Burrows, Steven Hegedus, Robert Birkmire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Heterostuctures of amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) were investigated with special emphasis on the effect of emitter [p (a-Si:H)] and buffer layer [i (a-Si:H)] processing conditions. Boron (B)-doping in emitter layer sensitively affects performance of heterojunction solar cells without a buffer layer and controls valence band offset (ΔEv) at the hetero-interface. Insertion of 10 nm buffer layers passivate c-Si surface very efficiently albeit with an increased ΔE V and poor carrier transport across the heterojunction. Consequently, an open circuit voltage (VOC) of 700 mV was achieved with low fill factor (FF). Buffer layers deposited at high H2/SiH4 ratio (R=40) and/or at higher temperature (300°C) improve FF (77%) but lead to lower VOC (638 mV). Therefore, the emitter and the buffer layer process parameters play important roles to determine the band alignment and carrier transport across the a-Si:H / c-Si hetero-interface.

Original languageEnglish (US)
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages1283-1286
Number of pages4
ISBN (Print)1424400163, 9781424400164
DOIs
StatePublished - Jan 1 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: May 7 2006May 12 2006

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume2

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period5/7/065/12/06

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ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Das, U., Bowden, S., Burrows, M., Hegedus, S., & Birkmire, R. (2006). Effect of process parameter variation in deposited emitter and buffer layers on the performance of silicon heterojunction solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1283-1286). [4059878] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279648