Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor

D. Patel, C. S. Menoni, D. W. Schult, T. McMahon, S. M. Goodnick

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.

Original languageEnglish (US)
Pages (from-to)669-672
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume56
Issue number3-4
DOIs
StatePublished - Jan 1 1995
Externally publishedYes

Keywords

  • A. semiconductors
  • C. high pressure
  • D. electrical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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