Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor

D. Patel, C. S. Menoni, D. W. Schult, T. McMahon, Stephen Goodnick

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.

Original languageEnglish (US)
Pages (from-to)669-672
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume56
Issue number3-4
StatePublished - Mar 1995
Externally publishedYes

Fingerprint

Field effect transistors
aluminum gallium arsenides
Heterojunctions
heterojunctions
field effect transistors
output
carrier mobility
threshold voltage
pressure dependence
electrical measurement
Carrier mobility
Voltage measurement
valence
Electric current measurement
Valence bands
Threshold voltage
shift
electric potential
room temperature
gases

Keywords

  • A. semiconductors
  • C. high pressure
  • D. electrical properties

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Chemistry(all)

Cite this

Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor. / Patel, D.; Menoni, C. S.; Schult, D. W.; McMahon, T.; Goodnick, Stephen.

In: Journal of Physics and Chemistry of Solids, Vol. 56, No. 3-4, 03.1995, p. 669-672.

Research output: Contribution to journalArticle

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AU - Goodnick, Stephen

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N2 - We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.

AB - We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.

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