Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor

D. Patel; C. S. Menoni; D. W. Schult; T. McMahon; S. M. Goodnick

doi:10.1016/0022-3697(94)00261-4

Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor

D. Patel, C. S. Menoni, D. W. Schult, T. McMahon, S. M. Goodnick

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (I_dss). This increase in I_dss is associated with a change in the threshold voltage (V_t), and carrier mobility in the two dimensional hole gas at the interface. The shift in V_t with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.

Original language	English (US)
Pages (from-to)	669-672
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	56
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-3697(94)00261-4
State	Published - 1995
Externally published	Yes

Keywords

A. semiconductors
C. high pressure
D. electrical properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/0022-3697(94)00261-4

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@article{57731dfd15cf4524af11f884ce35b479,

title = "Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor",

abstract = "We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.",

keywords = "A. semiconductors, C. high pressure, D. electrical properties",

author = "D. Patel and Menoni, {C. S.} and Schult, {D. W.} and T. McMahon and Goodnick, {S. M.}",

note = "Funding Information: Acknowledgements-Thisw ork was supported by the National ScienceF oundation, Center for Optoelectronic ComputerS ystemsG, rant No. EEC 9015128a,n d by the ColoradoA dvancedT echnologyI nstituteG rant No. UCB Res. No. 0594.75.078CB..S .M. acknowledgtehse s upport of the National ScienceF oundation Grant No. DMR-9321422.",

year = "1995",

doi = "10.1016/0022-3697(94)00261-4",

language = "English (US)",

volume = "56",

pages = "669--672",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "3-4",

}

TY - JOUR

T1 - Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor

AU - Patel, D.

AU - Menoni, C. S.

AU - Schult, D. W.

AU - McMahon, T.

AU - Goodnick, S. M.

N1 - Funding Information: Acknowledgements-Thisw ork was supported by the National ScienceF oundation, Center for Optoelectronic ComputerS ystemsG, rant No. EEC 9015128a,n d by the ColoradoA dvancedT echnologyI nstituteG rant No. UCB Res. No. 0594.75.078CB..S .M. acknowledgtehse s upport of the National ScienceF oundation Grant No. DMR-9321422.

PY - 1995

Y1 - 1995

N2 - We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.

AB - We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.

KW - A. semiconductors

KW - C. high pressure

KW - D. electrical properties

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U2 - 10.1016/0022-3697(94)00261-4

DO - 10.1016/0022-3697(94)00261-4

M3 - Article

AN - SCOPUS:0005774709

VL - 56

SP - 669

EP - 672

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

SN - 0022-3697

IS - 3-4

ER -

Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor

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Keywords

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