Abstract
We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 669-672 |
| Number of pages | 4 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 56 |
| Issue number | 3-4 |
| State | Published - Mar 1995 |
| Externally published | Yes |
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Keywords
- A. semiconductors
- C. high pressure
- D. electrical properties
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Science(all)
- Chemistry(all)
Cite this
Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor. / Patel, D.; Menoni, C. S.; Schult, D. W.; McMahon, T.; Goodnick, Stephen.
In: Journal of Physics and Chemistry of Solids, Vol. 56, No. 3-4, 03.1995, p. 669-672.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor
AU - Patel, D.
AU - Menoni, C. S.
AU - Schult, D. W.
AU - McMahon, T.
AU - Goodnick, Stephen
PY - 1995/3
Y1 - 1995/3
N2 - We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.
AB - We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.
KW - A. semiconductors
KW - C. high pressure
KW - D. electrical properties
UR - http://www.scopus.com/inward/record.url?scp=0005774709&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0005774709&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0005774709
VL - 56
SP - 669
EP - 672
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 3-4
ER -