Abstract
We report current-voltage measurements on p-channel GaAs/AlGaAs heterojunction field effect transistor as a function of pressure up to 1.3 GPa at room temperature. Under high pressure conditions, the main effect observed is an increase in the saturated current (Idss). This increase in Idss is associated with a change in the threshold voltage (Vt), and carrier mobility in the two dimensional hole gas at the interface. The shift in Vt with pressure can be interpreted in terms of the increase in the valence band offset due to the relative change in the bandgap of the materials. Through model fits to the device characteristics at various pressures, the pressure dependence of mobility was extracted.
Original language | English (US) |
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Pages (from-to) | 669-672 |
Number of pages | 4 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 56 |
Issue number | 3-4 |
DOIs | |
State | Published - Jan 1 1995 |
Externally published | Yes |
Keywords
- A. semiconductors
- C. high pressure
- D. electrical properties
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics