Effect of phonon confinement in quantum well systems

P. Lugli, P. Bordone, S. Gualdi, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We discuss the role of LO-phonons confinement in quantum well systems, by comparing two different phonon models that have been proposed in the literature. A critical discussion concerning the use of macroscopic approaches for the description of phonons in two dimensional systems is presented. We use a Monte Carlo simulation which includes nonequilibrium phonon effects as well as carrier-carrier scattering to determine the effect of phonon confinent on the relaxation of photoexcited carriers in AlGaAs-GaAs quantum wells. Good agreement with available experimental data is found. Even at low excitation densities, intercarrier scattering and phonon reabsorption are important, and need to be taken into account in the interpretation of experimental data.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsRobert R. Alfano
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages11-19
Number of pages9
Volume1282
ISBN (Print)0819403334
StatePublished - 1990
Externally publishedYes
EventUltrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III - San Diego, CA, USA
Duration: Mar 18 1990Mar 19 1990

Other

OtherUltrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
CitySan Diego, CA, USA
Period3/18/903/19/90

Fingerprint

Phonons
Semiconductor quantum wells
quantum wells
Scattering
phonons
scattering
aluminum gallium arsenides
excitation
simulation
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Lugli, P., Bordone, P., Gualdi, S., & Goodnick, S. (1990). Effect of phonon confinement in quantum well systems. In R. R. Alfano (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1282, pp. 11-19). Bellingham, WA, United States: Publ by Int Soc for Optical Engineering.

Effect of phonon confinement in quantum well systems. / Lugli, P.; Bordone, P.; Gualdi, S.; Goodnick, Stephen.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Robert R. Alfano. Vol. 1282 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. p. 11-19.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lugli, P, Bordone, P, Gualdi, S & Goodnick, S 1990, Effect of phonon confinement in quantum well systems. in RR Alfano (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1282, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 11-19, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, San Diego, CA, USA, 3/18/90.
Lugli P, Bordone P, Gualdi S, Goodnick S. Effect of phonon confinement in quantum well systems. In Alfano RR, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1282. Bellingham, WA, United States: Publ by Int Soc for Optical Engineering. 1990. p. 11-19
Lugli, P. ; Bordone, P. ; Gualdi, S. ; Goodnick, Stephen. / Effect of phonon confinement in quantum well systems. Proceedings of SPIE - The International Society for Optical Engineering. editor / Robert R. Alfano. Vol. 1282 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. pp. 11-19
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