Effect of phonon confinement in quantum well systems

P. Lugli, P. Bordone, S. Gualdi, S. M. Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We discuss the role of LO-phonons confinement in quantum well systems, by comparing two different phonon models that have been proposed in the literature. A critical discussion concerning the use of macroscopic approaches for the description of phonons in two dimensional systems is presented. We use a Monte Carlo simulation which includes nonequilibrium phonon effects as well as carrier-carrier scattering to determine the effect of phonon confinent on the relaxation of photoexcited carriers in AlGaAs-GaAs quantum wells. Good agreement with available experimental data is found. Even at low excitation densities, intercarrier scattering and phonon reabsorption are important, and need to be taken into account in the interpretation of experimental data.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages11-19
Number of pages9
ISBN (Print)0819403334, 9780819403339
DOIs
StatePublished - 1990
Externally publishedYes
EventUltrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III - San Diego, CA, USA
Duration: Mar 18 1990Mar 19 1990

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1282
ISSN (Print)0277-786X

Other

OtherUltrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
CitySan Diego, CA, USA
Period3/18/903/19/90

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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