Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy

Zhi Tao Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, John Kouvetakis, I. S T Tsong

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB2(0001) films prepared ex situ and in situ was studied using an ultrahigh-vacuum molecular-beam epitaxy (MBE)-scanning probe microscopy system. The growth of GaN was carried out by rf-plasma-assisted MBE, and epitaxy of wurtzite GaN was observed on both ex situ and in situ prepared ZrB2 samples. The polarity was found to be consistently N-polar regardless of the samples, based on the observation of a series of N-polar Ga-rich reconstructions: (3 × 3), (6 × 6), and c(6 × 12). The nitridation of ZrB2 film was conducted by exposing it to active nitrogen and well-ordered hexagonal-BN (h-BN) formation was observed when the annealing temperature was above 900 °C. The partially formed BN layer affected neither the epitaxy nor the polarity of GaN, but when the surface was fully covered with well-ordered h-BN, GaN growth did not occur.

Original languageEnglish (US)
Article number033506
JournalJournal of Applied Physics
Volume100
Issue number3
DOIs
StatePublished - 2006

Fingerprint

molecular beam epitaxy
epitaxy
polarity
wurtzite
ultrahigh vacuum
microscopy
nitrogen
annealing
scanning
probes
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Wang, Z. T., Yamada-Takamura, Y., Fujikawa, Y., Sakurai, T., Xue, Q. K., Tolle, J., ... Tsong, I. S. T. (2006). Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy. Journal of Applied Physics, 100(3), [033506]. https://doi.org/10.1063/1.2218763

Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy. / Wang, Zhi Tao; Yamada-Takamura, Y.; Fujikawa, Y.; Sakurai, T.; Xue, Q. K.; Tolle, J.; Kouvetakis, John; Tsong, I. S T.

In: Journal of Applied Physics, Vol. 100, No. 3, 033506, 2006.

Research output: Contribution to journalArticle

Wang, ZT, Yamada-Takamura, Y, Fujikawa, Y, Sakurai, T, Xue, QK, Tolle, J, Kouvetakis, J & Tsong, IST 2006, 'Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy', Journal of Applied Physics, vol. 100, no. 3, 033506. https://doi.org/10.1063/1.2218763
Wang, Zhi Tao ; Yamada-Takamura, Y. ; Fujikawa, Y. ; Sakurai, T. ; Xue, Q. K. ; Tolle, J. ; Kouvetakis, John ; Tsong, I. S T. / Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 3.
@article{80712ea32f87440dba62ad9510809975,
title = "Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy",
abstract = "The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB2(0001) films prepared ex situ and in situ was studied using an ultrahigh-vacuum molecular-beam epitaxy (MBE)-scanning probe microscopy system. The growth of GaN was carried out by rf-plasma-assisted MBE, and epitaxy of wurtzite GaN was observed on both ex situ and in situ prepared ZrB2 samples. The polarity was found to be consistently N-polar regardless of the samples, based on the observation of a series of N-polar Ga-rich reconstructions: (3 × 3), (6 × 6), and c(6 × 12). The nitridation of ZrB2 film was conducted by exposing it to active nitrogen and well-ordered hexagonal-BN (h-BN) formation was observed when the annealing temperature was above 900 °C. The partially formed BN layer affected neither the epitaxy nor the polarity of GaN, but when the surface was fully covered with well-ordered h-BN, GaN growth did not occur.",
author = "Wang, {Zhi Tao} and Y. Yamada-Takamura and Y. Fujikawa and T. Sakurai and Xue, {Q. K.} and J. Tolle and John Kouvetakis and Tsong, {I. S T}",
year = "2006",
doi = "10.1063/1.2218763",
language = "English (US)",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy

AU - Wang, Zhi Tao

AU - Yamada-Takamura, Y.

AU - Fujikawa, Y.

AU - Sakurai, T.

AU - Xue, Q. K.

AU - Tolle, J.

AU - Kouvetakis, John

AU - Tsong, I. S T

PY - 2006

Y1 - 2006

N2 - The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB2(0001) films prepared ex situ and in situ was studied using an ultrahigh-vacuum molecular-beam epitaxy (MBE)-scanning probe microscopy system. The growth of GaN was carried out by rf-plasma-assisted MBE, and epitaxy of wurtzite GaN was observed on both ex situ and in situ prepared ZrB2 samples. The polarity was found to be consistently N-polar regardless of the samples, based on the observation of a series of N-polar Ga-rich reconstructions: (3 × 3), (6 × 6), and c(6 × 12). The nitridation of ZrB2 film was conducted by exposing it to active nitrogen and well-ordered hexagonal-BN (h-BN) formation was observed when the annealing temperature was above 900 °C. The partially formed BN layer affected neither the epitaxy nor the polarity of GaN, but when the surface was fully covered with well-ordered h-BN, GaN growth did not occur.

AB - The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB2(0001) films prepared ex situ and in situ was studied using an ultrahigh-vacuum molecular-beam epitaxy (MBE)-scanning probe microscopy system. The growth of GaN was carried out by rf-plasma-assisted MBE, and epitaxy of wurtzite GaN was observed on both ex situ and in situ prepared ZrB2 samples. The polarity was found to be consistently N-polar regardless of the samples, based on the observation of a series of N-polar Ga-rich reconstructions: (3 × 3), (6 × 6), and c(6 × 12). The nitridation of ZrB2 film was conducted by exposing it to active nitrogen and well-ordered hexagonal-BN (h-BN) formation was observed when the annealing temperature was above 900 °C. The partially formed BN layer affected neither the epitaxy nor the polarity of GaN, but when the surface was fully covered with well-ordered h-BN, GaN growth did not occur.

UR - http://www.scopus.com/inward/record.url?scp=33747335896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747335896&partnerID=8YFLogxK

U2 - 10.1063/1.2218763

DO - 10.1063/1.2218763

M3 - Article

AN - SCOPUS:33747335896

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033506

ER -