Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy

Zhi Tao Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, John Kouvetakis, I. S T Tsong

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Abstract

The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB2(0001) films prepared ex situ and in situ was studied using an ultrahigh-vacuum molecular-beam epitaxy (MBE)-scanning probe microscopy system. The growth of GaN was carried out by rf-plasma-assisted MBE, and epitaxy of wurtzite GaN was observed on both ex situ and in situ prepared ZrB2 samples. The polarity was found to be consistently N-polar regardless of the samples, based on the observation of a series of N-polar Ga-rich reconstructions: (3 × 3), (6 × 6), and c(6 × 12). The nitridation of ZrB2 film was conducted by exposing it to active nitrogen and well-ordered hexagonal-BN (h-BN) formation was observed when the annealing temperature was above 900 °C. The partially formed BN layer affected neither the epitaxy nor the polarity of GaN, but when the surface was fully covered with well-ordered h-BN, GaN growth did not occur.

Original languageEnglish (US)
Article number033506
JournalJournal of Applied Physics
Volume100
Issue number3
DOIs
StatePublished - Aug 23 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Wang, Z. T., Yamada-Takamura, Y., Fujikawa, Y., Sakurai, T., Xue, Q. K., Tolle, J., Kouvetakis, J., & Tsong, I. S. T. (2006). Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy. Journal of Applied Physics, 100(3), [033506]. https://doi.org/10.1063/1.2218763