Effect of nanoscale surface roughness on transverse energy spread from GaAs photocathodes

Siddharth Karkare, Ivan Bazarov

Research output: Contribution to journalArticle

46 Scopus citations

Abstract

High quantum yield, low transverse energy spread, and prompt response time make GaAs activated to negative electron affinity an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. We show that a nanoscale surface roughness can affect the transverse electron spread from GaAs by nearly an order of magnitude and explain the seemingly controversial experimental results obtained so far. This model can also explain the measured dependence of transverse energy spread on the wavelength of incident light.

Original languageEnglish (US)
Article number094104
JournalApplied Physics Letters
Volume98
Issue number9
DOIs
StatePublished - Feb 28 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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