Effect of molecular weight on poly(methyl methacrylate) resolution

Maroun Khoury, David K. Ferry

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Electron-beam lithography's resolution limit is greater than the beam diameter due to resist limitations as well as electron interaction with solids. We examine the effect of molecular weight on the resolution of poly(methyl methacrylate) (PMMA). The experimental procedure uses thin Si3N4 in order to reduce the backscattered electron contribution to the exposure, and the resist contrast standard deviation σ was determined. Molecular weights of 950×103, 120×103, and 15×103 amu were used. It is found that relatively equivalent exposure and resolution are found in each case, and that the entanglement threshold is either lower than thought, or is not a factor in the resolution of PMMA. Lines as small as 7 nm are found in the highest molecular weight.

Original languageEnglish (US)
Pages (from-to)75-79
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number1
StatePublished - Jan 1996

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Polymethyl methacrylates
polymethyl methacrylate
molecular weight
Molecular weight
Electrons
Electron beam lithography
standard deviation
electron scattering
lithography
electron beams
thresholds
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Effect of molecular weight on poly(methyl methacrylate) resolution. / Khoury, Maroun; Ferry, David K.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 14, No. 1, 01.1996, p. 75-79.

Research output: Contribution to journalArticle

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