Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. J. Liu, V. Avrutin, S. Okur, F. Zhang, Ü Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, David Smith, H. Morkoç

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