Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells

Y. Huang, K. W. Sun, A. M. Fischer, Q. Y. Wei, R. Juday, Fernando Ponce, R. Kato, T. Yokogawa

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Abstract

A correlation has been established between the optical and structural properties of blue-light-emitting diode structures grown on free-standing m-plane GaN. A double-peak InGaN quantum well emission at room temperature has been observed with a strong inhomogeneous spatial distribution, which can be associated with the presence of dislocations originating at the InGaN layers. It is argued that the difference in peak energy positions is due to in-plane piezoelectric fields within the dislocated regions.

Original languageEnglish (US)
Article number261914
JournalApplied Physics Letters
Volume98
Issue number26
DOIs
StatePublished - Jun 27 2011

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Huang, Y., Sun, K. W., Fischer, A. M., Wei, Q. Y., Juday, R., Ponce, F., Kato, R., & Yokogawa, T. (2011). Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells. Applied Physics Letters, 98(26), [261914]. https://doi.org/10.1063/1.3605253