TY - JOUR
T1 - Effect of microstructure on the arsenic profile in implanted silicon
AU - Coghlan, W. A.
AU - Rhee, M. H.
AU - Williams, J. M.
AU - Streit, L. A.
AU - Williams, Peter
N1 - Funding Information:
We would like to acknowledge the support of this research by John Holder at Monsanto Corporation who provided the silicon ingot, and by Frank Garcia at Motorola Semiconductor Products. Inc. who cut and polished the wafers. In addition we acknowledge the help of D.D. Perry and Steve Lakomski who performed the computer calculations. The support of NSF Grant DMR 8206028i s acknowledged for the SIMS measurement. The ion implantation and RBS measured at Oak Ridge National Laboratory is provided under DOE Contract No. DE-AC05-840R21400. Finally the support of Arizona State University through Faculty Grant in Aids for 1983 and 1985 is appreciated.
PY - 1986/6/1
Y1 - 1986/6/1
N2 - According to an irradiation damage model, the profile of an implanted ion at temperatures great enough for diffusion to occur will depend on the defect sink density in the material. To test this model, pure silicon wafers were prepared with high and low defect densities. These wafers were implanted with about 5 × 1019 As+2 m2 at - 196, 300, and 600°C. After implanting the profiles were measured using Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. The observed spreading of the As-profile contradicts initial theoretical predictions.
AB - According to an irradiation damage model, the profile of an implanted ion at temperatures great enough for diffusion to occur will depend on the defect sink density in the material. To test this model, pure silicon wafers were prepared with high and low defect densities. These wafers were implanted with about 5 × 1019 As+2 m2 at - 196, 300, and 600°C. After implanting the profiles were measured using Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. The observed spreading of the As-profile contradicts initial theoretical predictions.
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U2 - 10.1016/0168-583X(86)90009-1
DO - 10.1016/0168-583X(86)90009-1
M3 - Article
AN - SCOPUS:0022078539
VL - 16
SP - 171
EP - 176
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 2-3
ER -