Effect of microstructure on the arsenic profile in implanted silicon

W. A. Coghlan, M. H. Rhee, J. M. Williams, L. A. Streit, Peter Williams

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

According to an irradiation damage model, the profile of an implanted ion at temperatures great enough for diffusion to occur will depend on the defect sink density in the material. To test this model, pure silicon wafers were prepared with high and low defect densities. These wafers were implanted with about 5 × 1019 As+2 m2 at - 196, 300, and 600°C. After implanting the profiles were measured using Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. The observed spreading of the As-profile contradicts initial theoretical predictions.

Original languageEnglish (US)
Pages (from-to)171-176
Number of pages6
JournalNuclear Inst. and Methods in Physics Research, B
Volume16
Issue number2-3
DOIs
StatePublished - Jun 1 1986

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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