Abstract

In this letter, we report the effects of electromechanical and mechanical strain on amorphous ZIO thin-film transistors (TFTs), deformed on cylindrical surfaces of varying radii for varying time spans. The TFTs were fabricated on island structures on polyethylene napthalate and subjected to both tensile and compressive stress, parallel and perpendicular to the conducting channel length. Mobility increased while the subthreshold slope decreased with tensile stress, and reverse changes were observed with compressive stress, both being parallel to the channel length. Almost no changes were observed for perpendicular stress, within experimental errors. The magnitude of change also depended on the time duration of the strain. None of the changes were catastrophic to cause complete failure of the devices.

Original languageEnglish (US)
Article number5618539
Pages (from-to)1416-1418
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
StatePublished - Dec 1 2010

Keywords

  • Polyethylene napthalate (PEN)
  • thin-film transistor (TFT)
  • uniaxial
  • zinc indium oxide (ZIO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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