TY - JOUR
T1 - Effect of mechanical and electromechanical stress on a-ZIO TFTs
AU - Dey, Aritra
AU - Indluru, Anil
AU - Venugopal, Sameer M.
AU - Allee, David
AU - Alford, Terry
N1 - Funding Information:
Manuscript received August 26, 2010; revised September 14, 2010; accepted September 17, 2010. Date of publication November 9, 2010; date of current version November 24, 2010. This work was supported by the Army Research Laboratory under Cooperative Agreement W911NG-04-2-0005. The review of this letter was arranged by Editor A. Nathan.
PY - 2010/12
Y1 - 2010/12
N2 - In this letter, we report the effects of electromechanical and mechanical strain on amorphous ZIO thin-film transistors (TFTs), deformed on cylindrical surfaces of varying radii for varying time spans. The TFTs were fabricated on island structures on polyethylene napthalate and subjected to both tensile and compressive stress, parallel and perpendicular to the conducting channel length. Mobility increased while the subthreshold slope decreased with tensile stress, and reverse changes were observed with compressive stress, both being parallel to the channel length. Almost no changes were observed for perpendicular stress, within experimental errors. The magnitude of change also depended on the time duration of the strain. None of the changes were catastrophic to cause complete failure of the devices.
AB - In this letter, we report the effects of electromechanical and mechanical strain on amorphous ZIO thin-film transistors (TFTs), deformed on cylindrical surfaces of varying radii for varying time spans. The TFTs were fabricated on island structures on polyethylene napthalate and subjected to both tensile and compressive stress, parallel and perpendicular to the conducting channel length. Mobility increased while the subthreshold slope decreased with tensile stress, and reverse changes were observed with compressive stress, both being parallel to the channel length. Almost no changes were observed for perpendicular stress, within experimental errors. The magnitude of change also depended on the time duration of the strain. None of the changes were catastrophic to cause complete failure of the devices.
KW - Polyethylene napthalate (PEN)
KW - thin-film transistor (TFT)
KW - uniaxial
KW - zinc indium oxide (ZIO)
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U2 - 10.1109/LED.2010.2080350
DO - 10.1109/LED.2010.2080350
M3 - Article
AN - SCOPUS:78649446473
SN - 0741-3106
VL - 31
SP - 1416
EP - 1418
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 12
M1 - 5618539
ER -