Abstract

The effects of Cu content on the electrical and structural properties of Ag-Cu thin films were studied before and after microwave processing. Copper was chosen as the alloying element because of its low solubility in Ag, which enables it to segregate at the surface. After microwave annealing, enhanced electrical and structural properties were observed. The results from Rutherford backscattering spectrometry, x-ray diffraction, and four-point probe measurements suggested that the resistivity is controlled by the residual copper concentration and increased grain growth during the low-temperature microwave anneals. For each particular copper concentration, microwave annealing resulted in highest Hall mobility and lowest resistivity. These findings opened the possibility for novel materials structures based on low-temperature microwave processing schemes.

Original languageEnglish (US)
Pages (from-to)534-537
Number of pages4
JournalJOM
Volume65
Issue number4
DOIs
StatePublished - Apr 1 2013

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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