Effect of layer thickness on the electrostatic potential in InGaN quantum wells

M. Stevens, A. Bell, Martha McCartney, Fernando Ponce, H. Marui, S. Tanaka

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

High-resolution electron holography in the transmission electron microscope has the capability to profile the spatial variation of the electrostatic potential in semiconductors, at subnanometer resolution. We have used electron holography to measure the internal electrostatic potential and fields across quantum wells with well thickness ranging from 2 to 10 nm, at a nominal indium concentration of x=0.13. A comparison of field strength versus well width shows a precipitous drop in field strength beyond 6 nm. A close look at the microstructure of the widest well shows additional contrast at the growth interface. An explanation consistent with both observations supports the possibility of compositional fluctuations in combination with strain relaxation at the early stages of growth of the quantum well.

Original languageEnglish (US)
Pages (from-to)4651-4653
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number20
DOIs
StatePublished - Nov 15 2004

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holography
field strength
quantum wells
electrostatics
indium
electrons
electron microscopes
microstructure
high resolution
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of layer thickness on the electrostatic potential in InGaN quantum wells. / Stevens, M.; Bell, A.; McCartney, Martha; Ponce, Fernando; Marui, H.; Tanaka, S.

In: Applied Physics Letters, Vol. 85, No. 20, 15.11.2004, p. 4651-4653.

Research output: Contribution to journalArticle

Stevens, M. ; Bell, A. ; McCartney, Martha ; Ponce, Fernando ; Marui, H. ; Tanaka, S. / Effect of layer thickness on the electrostatic potential in InGaN quantum wells. In: Applied Physics Letters. 2004 ; Vol. 85, No. 20. pp. 4651-4653.
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