Effect of la and y on crystallization temperatures of hafnia and zirconia

Sergey V. Ushakov; Crystalyn E. Brown; Alexandra Navrotsky

doi:10.1557/jmr.2004.19.3.693

Effect of la and y on crystallization temperatures of hafnia and zirconia

Sergey V. Ushakov, Crystalyn E. Brown, Alexandra Navrotsky

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

Crystallization of amorphous Y- and La-doped HfO2 and ZrO2 nanophase powders was studied using thermal analysis and high-temperature x-ray diffraction. Substantial increase of crystallization temperature of amorphous hafnium and zirconium oxides could be achieved by alloying with La2O3. The crystallization temperature of Hf2La2O7 composition is higher than 900 °C, which makes it a candidate for advanced gate dielectrics. In contrast, Y-doping did not significantly raise the crystallization temperature.

Original language	English (US)
Pages (from-to)	693-696
Number of pages	4
Journal	Journal of Materials Research
Volume	19
Issue number	3
DOIs	https://doi.org/10.1557/jmr.2004.19.3.693
State	Published - Mar 2004
Externally published	Yes

Keywords

Amorphous
Dielectric properties
Differential thermal analysis (DTA)

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/jmr.2004.19.3.693

Cite this

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title = "Effect of la and y on crystallization temperatures of hafnia and zirconia",

abstract = "Crystallization of amorphous Y- and La-doped HfO2 and ZrO2 nanophase powders was studied using thermal analysis and high-temperature x-ray diffraction. Substantial increase of crystallization temperature of amorphous hafnium and zirconium oxides could be achieved by alloying with La2O3. The crystallization temperature of Hf2La2O7 composition is higher than 900 °C, which makes it a candidate for advanced gate dielectrics. In contrast, Y-doping did not significantly raise the crystallization temperature.",

keywords = "Amorphous, Dielectric properties, Differential thermal analysis (DTA)",

author = "Ushakov, {Sergey V.} and Brown, {Crystalyn E.} and Alexandra Navrotsky",

note = "Funding Information: This work was supported by UC-SMART program and Motorola as part of the project “Thermochemistry of gate dielectric films.” HRTEM imaging was performed at the National Center for Electron Microscopy, Lawrence Berkeley National Laboratoty. We wish to thank A. Demkov and B-Y. Nguyen for useful discussions and two anonymous reviewers for their comments.",

year = "2004",

month = mar,

doi = "10.1557/jmr.2004.19.3.693",

language = "English (US)",

volume = "19",

pages = "693--696",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

number = "3",

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TY - JOUR

T1 - Effect of la and y on crystallization temperatures of hafnia and zirconia

AU - Ushakov, Sergey V.

AU - Brown, Crystalyn E.

AU - Navrotsky, Alexandra

N1 - Funding Information: This work was supported by UC-SMART program and Motorola as part of the project “Thermochemistry of gate dielectric films.” HRTEM imaging was performed at the National Center for Electron Microscopy, Lawrence Berkeley National Laboratoty. We wish to thank A. Demkov and B-Y. Nguyen for useful discussions and two anonymous reviewers for their comments.

PY - 2004/3

Y1 - 2004/3

N2 - Crystallization of amorphous Y- and La-doped HfO2 and ZrO2 nanophase powders was studied using thermal analysis and high-temperature x-ray diffraction. Substantial increase of crystallization temperature of amorphous hafnium and zirconium oxides could be achieved by alloying with La2O3. The crystallization temperature of Hf2La2O7 composition is higher than 900 °C, which makes it a candidate for advanced gate dielectrics. In contrast, Y-doping did not significantly raise the crystallization temperature.

AB - Crystallization of amorphous Y- and La-doped HfO2 and ZrO2 nanophase powders was studied using thermal analysis and high-temperature x-ray diffraction. Substantial increase of crystallization temperature of amorphous hafnium and zirconium oxides could be achieved by alloying with La2O3. The crystallization temperature of Hf2La2O7 composition is higher than 900 °C, which makes it a candidate for advanced gate dielectrics. In contrast, Y-doping did not significantly raise the crystallization temperature.

KW - Amorphous

KW - Dielectric properties

KW - Differential thermal analysis (DTA)

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DO - 10.1557/jmr.2004.19.3.693

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EP - 696

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 3

ER -

Effect of la and y on crystallization temperatures of hafnia and zirconia

Abstract

Keywords

ASJC Scopus subject areas

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