Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation

Engineering & Materials Science

• MISFET devices 100%
• Surface roughness 43%
• Silicon 41%
• Scattering 16%
• MOSFET devices 13%
• Phonon scattering 10%
• Electron mobility 9%
• Boundary conditions 4%

Physics & Astronomy

• MIS (semiconductors) 58%
• roughness 43%
• field effect transistors 41%
• silicon 28%
• insulators 12%
• scattering 11%
• Boltzmann transport equation 7%
• electron mobility 5%
• simulation 4%
• boundary conditions 4%
• phonons 3%
• performance 2%