TY - GEN
T1 - Effect of Ingot Variability on Performance of Silicon Heterojunction Solar Cells
AU - Srinivasa, Apoorva
AU - Herasimenka, Stanislau
AU - Augusto, Andre
AU - Bowden, Stuart
N1 - Funding Information:
ACKNOWLEDGEMENT This material is based upon work supported by the Department of Energy, Office of Energy Efficiency and Renewable Energy (EERE), under Award Number DEEE0007540.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/6/14
Y1 - 2020/6/14
N2 - Silicon ingots grown by the Czochralski method have natural distributions in their bulk material specifications such as bulk resistivity and metal impurities. Since high efficiency solar cell technologies, like silicon heterojunction cells, have superior surface passivation, bulk material is the dominant factor in cell performance. Device performance can be impacted by variations in bulk along the growth-axis of the ingot. In this paper, we sample wafers from every part of the ingot and measure bulk resistivity, before and after thermal annealing. We then passivate those samples to determine bulk lifetimes. We also prepare heterojunction structures and measure the minority carrier lifetime and pseudo efficiency of the wafers. It is seen that the wafers at the top of the ingot have higher values of resistivity after annealing which indicates the presence of thermal donors. This behavior is consistent with wafers of the ingot from another manufacturer. The lifetimes of wafers decrease as we move from top to bottom of the ingot pointing to the presence of metal impurities in the tail end of the ingot. However, these variations only lead to approximately 1% variation in cell efficiency, with possibly lower effect of bulk variation of ingot in thinner cells.
AB - Silicon ingots grown by the Czochralski method have natural distributions in their bulk material specifications such as bulk resistivity and metal impurities. Since high efficiency solar cell technologies, like silicon heterojunction cells, have superior surface passivation, bulk material is the dominant factor in cell performance. Device performance can be impacted by variations in bulk along the growth-axis of the ingot. In this paper, we sample wafers from every part of the ingot and measure bulk resistivity, before and after thermal annealing. We then passivate those samples to determine bulk lifetimes. We also prepare heterojunction structures and measure the minority carrier lifetime and pseudo efficiency of the wafers. It is seen that the wafers at the top of the ingot have higher values of resistivity after annealing which indicates the presence of thermal donors. This behavior is consistent with wafers of the ingot from another manufacturer. The lifetimes of wafers decrease as we move from top to bottom of the ingot pointing to the presence of metal impurities in the tail end of the ingot. However, these variations only lead to approximately 1% variation in cell efficiency, with possibly lower effect of bulk variation of ingot in thinner cells.
KW - Cz silicon
KW - ingot variability
KW - lifetime
KW - resistivity
KW - thermal donors
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U2 - 10.1109/PVSC45281.2020.9300928
DO - 10.1109/PVSC45281.2020.9300928
M3 - Conference contribution
AN - SCOPUS:85099536357
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2238
EP - 2241
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Y2 - 15 June 2020 through 21 August 2020
ER -