TY - GEN
T1 - Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots
AU - Kim, Yeongho
AU - Faleev, Nikolai N.
AU - Honsberg, Christiana
PY - 2015/12/14
Y1 - 2015/12/14
N2 - The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 % have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 % is incorporated. However, the further increase of In content to 7 and 9 % leads to the decrease of the defect density as a result of the reduced lattice mismatch between the InAs QDs and InGaAsSb layers.
AB - The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 % have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 % is incorporated. However, the further increase of In content to 7 and 9 % leads to the decrease of the defect density as a result of the reduced lattice mismatch between the InAs QDs and InGaAsSb layers.
KW - crystalline defects
KW - intermediate band solar cells
KW - quantum dots
KW - strain reducing layer
KW - x-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=84961642730&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961642730&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2015.7355809
DO - 10.1109/PVSC.2015.7355809
M3 - Conference contribution
AN - SCOPUS:84961642730
T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Y2 - 14 June 2015 through 19 June 2015
ER -