Abstract

The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 % have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 % is incorporated. However, the further increase of In content to 7 and 9 % leads to the decrease of the defect density as a result of the reduced lattice mismatch between the InAs QDs and InGaAsSb layers.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Fingerprint

Lattice mismatch
Defect density
Semiconductor quantum dots
Structural properties
Diffraction
Crystalline materials
X rays
Defects
indium arsenide

Keywords

  • crystalline defects
  • intermediate band solar cells
  • quantum dots
  • strain reducing layer
  • x-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kim, Y., Faleev, N. N., & Honsberg, C. (2015). Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355809] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355809

Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots. / Kim, Yeongho; Faleev, Nikolai N.; Honsberg, Christiana.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355809.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, Y, Faleev, NN & Honsberg, C 2015, Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355809, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355809
Kim Y, Faleev NN, Honsberg C. Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355809 https://doi.org/10.1109/PVSC.2015.7355809
Kim, Yeongho ; Faleev, Nikolai N. ; Honsberg, Christiana. / Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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abstract = "The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 {\%} have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 {\%} is incorporated. However, the further increase of In content to 7 and 9 {\%} leads to the decrease of the defect density as a result of the reduced lattice mismatch between the InAs QDs and InGaAsSb layers.",
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