Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots

Yeongho Kim, Nikolai N. Faleev, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 % have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 % is incorporated. However, the further increase of In content to 7 and 9 % leads to the decrease of the defect density as a result of the reduced lattice mismatch between the InAs QDs and InGaAsSb layers.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Keywords

  • crystalline defects
  • intermediate band solar cells
  • quantum dots
  • strain reducing layer
  • x-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kim, Y., Faleev, N. N., & Honsberg, C. (2015). Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355809] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355809