Effect of inactivated dopants clusters and processing parameters on electrical properties of indium tin oxide on plastic substrates

Hauk Han, Jay Lewis, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100°C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical propeities such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages174-179
Number of pages6
Volume1074
StatePublished - 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 24 2008Mar 28 2008

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/24/083/28/08

Fingerprint

Tin oxides
indium oxides
Indium
tin oxides
Electric properties
plastics
electrical properties
Doping (additives)
Plastics
Oxide films
Substrates
Processing
Polyethylene
Sputtering
oxide films
Polyethylenes
polyethylenes
Optical properties
sputtering
Annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Han, H., Lewis, J., & Alford, T. (2008). Effect of inactivated dopants clusters and processing parameters on electrical properties of indium tin oxide on plastic substrates. In Materials Research Society Symposium Proceedings (Vol. 1074, pp. 174-179)

Effect of inactivated dopants clusters and processing parameters on electrical properties of indium tin oxide on plastic substrates. / Han, Hauk; Lewis, Jay; Alford, Terry.

Materials Research Society Symposium Proceedings. Vol. 1074 2008. p. 174-179.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Han, H, Lewis, J & Alford, T 2008, Effect of inactivated dopants clusters and processing parameters on electrical properties of indium tin oxide on plastic substrates. in Materials Research Society Symposium Proceedings. vol. 1074, pp. 174-179, 2008 MRS Spring Meeting, San Francisco, CA, United States, 3/24/08.
Han H, Lewis J, Alford T. Effect of inactivated dopants clusters and processing parameters on electrical properties of indium tin oxide on plastic substrates. In Materials Research Society Symposium Proceedings. Vol. 1074. 2008. p. 174-179
Han, Hauk ; Lewis, Jay ; Alford, Terry. / Effect of inactivated dopants clusters and processing parameters on electrical properties of indium tin oxide on plastic substrates. Materials Research Society Symposium Proceedings. Vol. 1074 2008. pp. 174-179
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