Effect of implantation energy on the defect formation in SIMOX

Sandeep Bagchi, J. D. Lee, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages40-41
Number of pages2
StatePublished - 1996
EventProceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
Duration: Sep 30 1996Oct 3 1996

Other

OtherProceedings of the 1996 IEEE International SOI Conference
CitySanibel Island, FL, USA
Period9/30/9610/3/96

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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