Effect of implantation energy on the defect formation in SIMOX

Sandeep Bagchi; J. D. Lee; Stephen Krause; P. Roitman

Effect of implantation energy on the defect formation in SIMOX

Sandeep Bagchi, J. D. Lee, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.

Original language	English (US)
Title of host publication	IEEE International SOI Conference
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	40-41
Number of pages	2
State	Published - 1996
Event	Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA Duration: Sep 30 1996 → Oct 3 1996

Other

Other	Proceedings of the 1996 IEEE International SOI Conference
City	Sanibel Island, FL, USA
Period	9/30/96 → 10/3/96

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@inproceedings{813a52d6f6294926aa86f55447e8f4ca,

title = "Effect of implantation energy on the defect formation in SIMOX",

abstract = "Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.",

author = "Sandeep Bagchi and Lee, {J. D.} and Stephen Krause and P. Roitman",

year = "1996",

language = "English (US)",

pages = "40--41",

booktitle = "IEEE International SOI Conference",

publisher = "IEEE",

note = "Proceedings of the 1996 IEEE International SOI Conference ; Conference date: 30-09-1996 Through 03-10-1996",

}

TY - GEN

T1 - Effect of implantation energy on the defect formation in SIMOX

AU - Bagchi, Sandeep

AU - Lee, J. D.

AU - Krause, Stephen

AU - Roitman, P.

PY - 1996

Y1 - 1996

N2 - Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.

AB - Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.

UR - http://www.scopus.com/inward/record.url?scp=0030401675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030401675&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030401675

SP - 40

EP - 41

BT - IEEE International SOI Conference

PB - IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1996 IEEE International SOI Conference

Y2 - 30 September 1996 through 3 October 1996

ER -

Effect of implantation energy on the defect formation in SIMOX

Abstract

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ASJC Scopus subject areas

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