Effect of implantation energy on the defect formation in SIMOX

Sandeep Bagchi, J. D. Lee, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages40-41
Number of pages2
StatePublished - 1996
EventProceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
Duration: Sep 30 1996Oct 3 1996

Other

OtherProceedings of the 1996 IEEE International SOI Conference
CitySanibel Island, FL, USA
Period9/30/9610/3/96

Fingerprint

Defects
Defect density
Crystalline materials
Silicon
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Bagchi, S., Lee, J. D., Krause, S., & Roitman, P. (1996). Effect of implantation energy on the defect formation in SIMOX. In IEEE International SOI Conference (pp. 40-41). Piscataway, NJ, United States: IEEE.

Effect of implantation energy on the defect formation in SIMOX. / Bagchi, Sandeep; Lee, J. D.; Krause, Stephen; Roitman, P.

IEEE International SOI Conference. Piscataway, NJ, United States : IEEE, 1996. p. 40-41.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bagchi, S, Lee, JD, Krause, S & Roitman, P 1996, Effect of implantation energy on the defect formation in SIMOX. in IEEE International SOI Conference. IEEE, Piscataway, NJ, United States, pp. 40-41, Proceedings of the 1996 IEEE International SOI Conference, Sanibel Island, FL, USA, 9/30/96.
Bagchi S, Lee JD, Krause S, Roitman P. Effect of implantation energy on the defect formation in SIMOX. In IEEE International SOI Conference. Piscataway, NJ, United States: IEEE. 1996. p. 40-41
Bagchi, Sandeep ; Lee, J. D. ; Krause, Stephen ; Roitman, P. / Effect of implantation energy on the defect formation in SIMOX. IEEE International SOI Conference. Piscataway, NJ, United States : IEEE, 1996. pp. 40-41
@inproceedings{813a52d6f6294926aa86f55447e8f4ca,
title = "Effect of implantation energy on the defect formation in SIMOX",
abstract = "Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.",
author = "Sandeep Bagchi and Lee, {J. D.} and Stephen Krause and P. Roitman",
year = "1996",
language = "English (US)",
pages = "40--41",
booktitle = "IEEE International SOI Conference",
publisher = "IEEE",

}

TY - GEN

T1 - Effect of implantation energy on the defect formation in SIMOX

AU - Bagchi, Sandeep

AU - Lee, J. D.

AU - Krause, Stephen

AU - Roitman, P.

PY - 1996

Y1 - 1996

N2 - Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.

AB - Experimental data show that defect densities in lower-dose SIMOX silicon-on-insulator (SOI) materials tend to increase with decreasing implantation dose. It was also found that low-dose SIMOX materials have high densities of crystalline and buried oxide (BOX) defects.

UR - http://www.scopus.com/inward/record.url?scp=0030401675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030401675&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030401675

SP - 40

EP - 41

BT - IEEE International SOI Conference

PB - IEEE

CY - Piscataway, NJ, United States

ER -