Abstract
The effect of implant dose on the microstructural changes found during Si island formation in low-dose SIMOX was studied. It was found that, for 0.225E18 cm-2 sample, a continuous BOX did not form, whereas for the 0.45E18 cm-2 and 0.675E18 cm-2 samples, lateral coalescence of banded oxide layers was sufficient to form a continuous BOX. However, for the 0.675E18 cm-2 sample, there were 3 to 4 banded layers of oxide at 1200°C, which coalescence into two thicker banded layers at 1275°C. These two layers evidently trapped isolated regions of Si during their coalescence, which resulted in the formation of a high density of Si islands in the BOX. Conversely, in the 0.45E18 cm-2 sample, the 1 to 2 banded layers at 1200°C coalesced into a single banded layer at 1275°C, which then annealed into a single continuous film with very low density of Si islands.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE International SOI Conference |
| Editors | Anon |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 118-119 |
| Number of pages | 2 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA Duration: Oct 3 1995 → Oct 5 1995 |
Other
| Other | Proceedings of the 1995 IEEE International SOI Conference |
|---|---|
| City | Tucson, AZ, USA |
| Period | 10/3/95 → 10/5/95 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Effect of implant dose on formation of buried-oxide Si islands in low-dose SIMOX. / Bagchi, Sandeep; Lee, J. D.; Krause, Stephen; Roitman, P.
IEEE International SOI Conference. ed. / Anon. Piscataway, NJ, United States : IEEE, 1995. p. 118-119.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effect of implant dose on formation of buried-oxide Si islands in low-dose SIMOX
AU - Bagchi, Sandeep
AU - Lee, J. D.
AU - Krause, Stephen
AU - Roitman, P.
PY - 1995
Y1 - 1995
N2 - The effect of implant dose on the microstructural changes found during Si island formation in low-dose SIMOX was studied. It was found that, for 0.225E18 cm-2 sample, a continuous BOX did not form, whereas for the 0.45E18 cm-2 and 0.675E18 cm-2 samples, lateral coalescence of banded oxide layers was sufficient to form a continuous BOX. However, for the 0.675E18 cm-2 sample, there were 3 to 4 banded layers of oxide at 1200°C, which coalescence into two thicker banded layers at 1275°C. These two layers evidently trapped isolated regions of Si during their coalescence, which resulted in the formation of a high density of Si islands in the BOX. Conversely, in the 0.45E18 cm-2 sample, the 1 to 2 banded layers at 1200°C coalesced into a single banded layer at 1275°C, which then annealed into a single continuous film with very low density of Si islands.
AB - The effect of implant dose on the microstructural changes found during Si island formation in low-dose SIMOX was studied. It was found that, for 0.225E18 cm-2 sample, a continuous BOX did not form, whereas for the 0.45E18 cm-2 and 0.675E18 cm-2 samples, lateral coalescence of banded oxide layers was sufficient to form a continuous BOX. However, for the 0.675E18 cm-2 sample, there were 3 to 4 banded layers of oxide at 1200°C, which coalescence into two thicker banded layers at 1275°C. These two layers evidently trapped isolated regions of Si during their coalescence, which resulted in the formation of a high density of Si islands in the BOX. Conversely, in the 0.45E18 cm-2 sample, the 1 to 2 banded layers at 1200°C coalesced into a single banded layer at 1275°C, which then annealed into a single continuous film with very low density of Si islands.
UR - http://www.scopus.com/inward/record.url?scp=0029491027&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029491027&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029491027
SP - 118
EP - 119
BT - IEEE International SOI Conference
A2 - Anon, null
PB - IEEE
CY - Piscataway, NJ, United States
ER -