Abstract
The effect of implant dose on the microstructural changes found during Si island formation in low-dose SIMOX was studied. It was found that, for 0.225E18 cm-2 sample, a continuous BOX did not form, whereas for the 0.45E18 cm-2 and 0.675E18 cm-2 samples, lateral coalescence of banded oxide layers was sufficient to form a continuous BOX. However, for the 0.675E18 cm-2 sample, there were 3 to 4 banded layers of oxide at 1200°C, which coalescence into two thicker banded layers at 1275°C. These two layers evidently trapped isolated regions of Si during their coalescence, which resulted in the formation of a high density of Si islands in the BOX. Conversely, in the 0.45E18 cm-2 sample, the 1 to 2 banded layers at 1200°C coalesced into a single banded layer at 1275°C, which then annealed into a single continuous film with very low density of Si islands.
Original language | English (US) |
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Title of host publication | IEEE International SOI Conference |
Editors | Anon |
Place of Publication | Piscataway, NJ, United States |
Publisher | IEEE |
Pages | 118-119 |
Number of pages | 2 |
State | Published - 1995 |
Event | Proceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA Duration: Oct 3 1995 → Oct 5 1995 |
Other
Other | Proceedings of the 1995 IEEE International SOI Conference |
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City | Tucson, AZ, USA |
Period | 10/3/95 → 10/5/95 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering