Effect of implant dose on formation of buried-oxide Si islands in low-dose SIMOX

Sandeep Bagchi, J. D. Lee, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

The effect of implant dose on the microstructural changes found during Si island formation in low-dose SIMOX was studied. It was found that, for 0.225E18 cm-2 sample, a continuous BOX did not form, whereas for the 0.45E18 cm-2 and 0.675E18 cm-2 samples, lateral coalescence of banded oxide layers was sufficient to form a continuous BOX. However, for the 0.675E18 cm-2 sample, there were 3 to 4 banded layers of oxide at 1200°C, which coalescence into two thicker banded layers at 1275°C. These two layers evidently trapped isolated regions of Si during their coalescence, which resulted in the formation of a high density of Si islands in the BOX. Conversely, in the 0.45E18 cm-2 sample, the 1 to 2 banded layers at 1200°C coalesced into a single banded layer at 1275°C, which then annealed into a single continuous film with very low density of Si islands.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages118-119
Number of pages2
StatePublished - 1995
EventProceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA
Duration: Oct 3 1995Oct 5 1995

Other

OtherProceedings of the 1995 IEEE International SOI Conference
CityTucson, AZ, USA
Period10/3/9510/5/95

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bagchi, S., Lee, J. D., Krause, S., & Roitman, P. (1995). Effect of implant dose on formation of buried-oxide Si islands in low-dose SIMOX. In Anon (Ed.), IEEE International SOI Conference (pp. 118-119). IEEE.