Effect of growth rate and gallium source on GaAsN

Sarah Kurtz, J. F. Geisz, B. M. Keyes, W. K. Metzger, D. J. Friedman, J. M. Olson, A. J. Ptak, R. R. King, N. H. Karam

Research output: Contribution to journalArticle

33 Scopus citations


The effect of growth rate and gallium source on GaAsN were analyzed. The GaAsN grown with trimethylgallium at high growth rates show increased carbon contamination, low photoluminescent lifetimes and high background acceptor concentrations. The lifetime was found to decrease with carbon concentration which shows that low lifetimes in the sample are caused by nonradiative recombination.

Original languageEnglish (US)
Pages (from-to)2634-2636
Number of pages3
JournalApplied Physics Letters
Issue number16
StatePublished - Apr 21 2003
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kurtz, S., Geisz, J. F., Keyes, B. M., Metzger, W. K., Friedman, D. J., Olson, J. M., Ptak, A. J., King, R. R., & Karam, N. H. (2003). Effect of growth rate and gallium source on GaAsN. Applied Physics Letters, 82(16), 2634-2636. https://doi.org/10.1063/1.1565500