The effect of growth rate and gallium source on GaAsN were analyzed. The GaAsN grown with trimethylgallium at high growth rates show increased carbon contamination, low photoluminescent lifetimes and high background acceptor concentrations. The lifetime was found to decrease with carbon concentration which shows that low lifetimes in the sample are caused by nonradiative recombination.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)