Effect of growth rate and gallium source on GaAsN

Sarah Kurtz, J. F. Geisz, B. M. Keyes, W. K. Metzger, D. J. Friedman, J. M. Olson, A. J. Ptak, Richard King, N. H. Karam

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The effect of growth rate and gallium source on GaAsN were analyzed. The GaAsN grown with trimethylgallium at high growth rates show increased carbon contamination, low photoluminescent lifetimes and high background acceptor concentrations. The lifetime was found to decrease with carbon concentration which shows that low lifetimes in the sample are caused by nonradiative recombination.

Original languageEnglish (US)
Pages (from-to)2634-2636
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number16
DOIs
StatePublished - Apr 21 2003
Externally publishedYes

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gallium
life (durability)
carbon
contamination

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kurtz, S., Geisz, J. F., Keyes, B. M., Metzger, W. K., Friedman, D. J., Olson, J. M., ... Karam, N. H. (2003). Effect of growth rate and gallium source on GaAsN. Applied Physics Letters, 82(16), 2634-2636. https://doi.org/10.1063/1.1565500

Effect of growth rate and gallium source on GaAsN. / Kurtz, Sarah; Geisz, J. F.; Keyes, B. M.; Metzger, W. K.; Friedman, D. J.; Olson, J. M.; Ptak, A. J.; King, Richard; Karam, N. H.

In: Applied Physics Letters, Vol. 82, No. 16, 21.04.2003, p. 2634-2636.

Research output: Contribution to journalArticle

Kurtz, S, Geisz, JF, Keyes, BM, Metzger, WK, Friedman, DJ, Olson, JM, Ptak, AJ, King, R & Karam, NH 2003, 'Effect of growth rate and gallium source on GaAsN', Applied Physics Letters, vol. 82, no. 16, pp. 2634-2636. https://doi.org/10.1063/1.1565500
Kurtz S, Geisz JF, Keyes BM, Metzger WK, Friedman DJ, Olson JM et al. Effect of growth rate and gallium source on GaAsN. Applied Physics Letters. 2003 Apr 21;82(16):2634-2636. https://doi.org/10.1063/1.1565500
Kurtz, Sarah ; Geisz, J. F. ; Keyes, B. M. ; Metzger, W. K. ; Friedman, D. J. ; Olson, J. M. ; Ptak, A. J. ; King, Richard ; Karam, N. H. / Effect of growth rate and gallium source on GaAsN. In: Applied Physics Letters. 2003 ; Vol. 82, No. 16. pp. 2634-2636.
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