Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition

Jeomoh Kim, Mi Hee Ji, Theeradetch Detchprohm, Russell D. Dupuis, Alec M. Fischer, Fernando Ponce, Jae Hyun Ryou

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Fingerprint

Dive into the research topics of 'Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Physics & Astronomy