Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

M. Nazari, Changhong Chen, A. A. Bernussi, Z. Y. Fan, M. Holtz

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found to depend on the free-carrier concentration and to correlate with an abrupt change in the temperature dependence of the vibrational energies of the V-O related Raman band. A phase diagram is proposed identifying insulating, intermediate, and conducting regimes. The intermediate region is attributed to a mixed phase.

Original languageEnglish (US)
Article number071902
JournalApplied Physics Letters
Volume99
Issue number7
DOIs
StatePublished - Aug 15 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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