Effect of electron-electron scattering on Monte Carlo studies of transport in submicron semiconductors devices

P. Lugli; D. K. Ferry

doi:10.1016/0378-4363(83)90497-7

Effect of electron-electron scattering on Monte Carlo studies of transport in submicron semiconductors devices

P. Lugli, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

In the Ensemble Monte Carlo (E.M.C.) Method, the fact that a distribution function exists and evolves with the ensemble can be used to include e-e scattering in the calculation without any a priori assumptions on the form of the distribution function. The straightforward and time-saving algorithm used to introduce e-e scattering in the E.M.C. is presented by considering n-Si in the presence of very high electric fields.

Original language	English (US)
Pages (from-to)	251-253
Number of pages	3
Journal	Physica B+C
Volume	117-118
Issue number	PART 1
DOIs	https://doi.org/10.1016/0378-4363(83)90497-7
State	Published - Mar 1983
Externally published	Yes

ASJC Scopus subject areas

General Engineering

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@article{e09f310423a146b39085de2ebf7e74f5,

title = "Effect of electron-electron scattering on Monte Carlo studies of transport in submicron semiconductors devices",

abstract = "In the Ensemble Monte Carlo (E.M.C.) Method, the fact that a distribution function exists and evolves with the ensemble can be used to include e-e scattering in the calculation without any a priori assumptions on the form of the distribution function. The straightforward and time-saving algorithm used to introduce e-e scattering in the E.M.C. is presented by considering n-Si in the presence of very high electric fields.",

author = "P. Lugli and Ferry, {D. K.}",

year = "1983",

month = mar,

doi = "10.1016/0378-4363(83)90497-7",

language = "English (US)",

volume = "117-118",

pages = "251--253",

journal = "Physica B+C",

issn = "0378-4363",

publisher = "North-Holland Publ Co",

number = "PART 1",

}

TY - JOUR

T1 - Effect of electron-electron scattering on Monte Carlo studies of transport in submicron semiconductors devices

AU - Lugli, P.

AU - Ferry, D. K.

PY - 1983/3

Y1 - 1983/3

N2 - In the Ensemble Monte Carlo (E.M.C.) Method, the fact that a distribution function exists and evolves with the ensemble can be used to include e-e scattering in the calculation without any a priori assumptions on the form of the distribution function. The straightforward and time-saving algorithm used to introduce e-e scattering in the E.M.C. is presented by considering n-Si in the presence of very high electric fields.

AB - In the Ensemble Monte Carlo (E.M.C.) Method, the fact that a distribution function exists and evolves with the ensemble can be used to include e-e scattering in the calculation without any a priori assumptions on the form of the distribution function. The straightforward and time-saving algorithm used to introduce e-e scattering in the E.M.C. is presented by considering n-Si in the presence of very high electric fields.

UR - http://www.scopus.com/inward/record.url?scp=0013360444&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0013360444&partnerID=8YFLogxK

U2 - 10.1016/0378-4363(83)90497-7

DO - 10.1016/0378-4363(83)90497-7

M3 - Article

AN - SCOPUS:0013360444

SN - 0378-4363

VL - 117-118

SP - 251

EP - 253

JO - Physica B+C

JF - Physica B+C

IS - PART 1

ER -

Effect of electron-electron scattering on Monte Carlo studies of transport in submicron semiconductors devices

Abstract

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