Effect of electron-electron and electron-plasmon interactions on hot carrier transport in semiconductors

P. Lugli, D. K. Ferry

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We present an Ensemble Monte Carlo (EMC) study of the electron-electron interaction in semiconductors, utilizing the full dielectric function to determine the contribution of the collective modes of the electron gas, i.e. the plasma oscillations, to the scattering terms. The transient dynamic response of electrons under high electric fields in n-Si and the quasi-ballistic motion of high energy electrons in n-GaAs are investigated.

Original languageEnglish (US)
Pages (from-to)532-536
Number of pages5
JournalPhysica B+C
Volume129
Issue number1-3
DOIs
StatePublished - 1985

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Hot carriers
Carrier transport
Beam plasma interactions
Plasma oscillations
Semiconductor materials
Electron-electron interactions
Electron gas
Electrons
Ballistics
Dynamic response
Electric fields
Scattering

Cite this

Effect of electron-electron and electron-plasmon interactions on hot carrier transport in semiconductors. / Lugli, P.; Ferry, D. K.

In: Physica B+C, Vol. 129, No. 1-3, 1985, p. 532-536.

Research output: Contribution to journalArticle

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