TY - JOUR
T1 - Effect of electron-electron and electron-plasmon interactions on hot carrier transport in semiconductors
AU - Lugli, P.
AU - Ferry, D. K.
N1 - Funding Information:
4. CONCLUSIONS We have shown here that the full electron-electron interaction can play an important role in transport in semiconductors, even in the case of non-degenerate statistics. The performance of submicron devices, based upon an overshoot or quasi-ballistic effect, can be strongly affected as a result of this interaction. We wish to express our thanks to W. Pore~, R. O. Grondin, and G. Wright for helpful discussions and to the U. S. Office of Naval Research for support for the work.
PY - 1985/3
Y1 - 1985/3
N2 - We present an Ensemble Monte Carlo (EMC) study of the electron-electron interaction in semiconductors, utilizing the full dielectric function to determine the contribution of the collective modes of the electron gas, i.e. the plasma oscillations, to the scattering terms. The transient dynamic response of electrons under high electric fields in n-Si and the quasi-ballistic motion of high energy electrons in n-GaAs are investigated.
AB - We present an Ensemble Monte Carlo (EMC) study of the electron-electron interaction in semiconductors, utilizing the full dielectric function to determine the contribution of the collective modes of the electron gas, i.e. the plasma oscillations, to the scattering terms. The transient dynamic response of electrons under high electric fields in n-Si and the quasi-ballistic motion of high energy electrons in n-GaAs are investigated.
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U2 - 10.1016/0378-4363(85)90639-4
DO - 10.1016/0378-4363(85)90639-4
M3 - Article
AN - SCOPUS:0347487909
VL - 129
SP - 532
EP - 536
JO - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
JF - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
SN - 0165-1757
IS - 1-3
ER -