Effect of dihydride bonding on the electrical properties of a-Si: H

W. J. Varhue, Veronica Burrows, H. Chao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of a-Si:H have been prepared in an inductively coupled RF discharge of silane/hydrogen mixtures. The electron drift mobility, photo-to-dark conductivity ratio, and activation energy were found to vary with hydrogen dilution. FTIR spectroscopy reveals that SiH and SiH 2 bond concentrations increase with H 2 dilution. The change in the electrical properties observed with H 2 dilution can be explained by the increase in dihydride bonding concentration.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherPubl by IEEE
Pages312-316
Number of pages5
Volume1
StatePublished - 1988
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: Sep 26 1988Sep 30 1988

Other

OtherTwentieth IEEE Photovoltaic Specialists Conference - 1988
CityLas Vegas, NV, USA
Period9/26/889/30/88

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Varhue, W. J., Burrows, V., & Chao, H. (1988). Effect of dihydride bonding on the electrical properties of a-Si: H. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 1, pp. 312-316). Publ by IEEE.