Abstract
Thin films of a-Si:H have been prepared in an inductively coupled RF discharge of silane/hydrogen mixtures. The electron drift mobility, photo-to-dark conductivity ratio, and activation energy were found to vary with hydrogen dilution. FTIR spectroscopy reveals that SiH and SiH 2 bond concentrations increase with H 2 dilution. The change in the electrical properties observed with H 2 dilution can be explained by the increase in dihydride bonding concentration.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Editors | Anon |
| Publisher | Publ by IEEE |
| Pages | 312-316 |
| Number of pages | 5 |
| Volume | 1 |
| State | Published - 1988 |
| Event | Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: Sep 26 1988 → Sep 30 1988 |
Other
| Other | Twentieth IEEE Photovoltaic Specialists Conference - 1988 |
|---|---|
| City | Las Vegas, NV, USA |
| Period | 9/26/88 → 9/30/88 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics