Effect of Cu content on the reaction growth and morphology of an Al 12W compound between Al-Cu/Ti-W bilayers

M. Park, Stephen Krause, S. R. Wilson

Research output: Contribution to journalArticle

Abstract

The effect of Cu content on the reaction growth and morphology of the Al12W phase in annealed Al-Cu/Ti-W films was directly studied by cross-section transmission electron microscopy. After heat treatment at 450°C for 30 min, spiked growths of the Al12W phase penetrated into the overlying Al-0.5 wt % Cu film. In contrast, increasing Cu concentration to 1.5% in the Al film suppressed the spiked growth of the Al12W phase, resulting in a smooth and discrete layer of Al12W between the Al-Cu and Ti-W films. It is suggested that an increasing amount of grain boundary segregation of Cu in the Al alloy film suppressed the Al12W spiked growth.

Original languageEnglish (US)
Pages (from-to)2203-2205
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number18
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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