Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

J. O. Olowolafe; I. Rau; K. M. Unruh; C. P. Swann; Z. S. Jawad; Terry Alford

doi:10.1016/S0040-6090(99)01113-X

Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

J. O. Olowolafe, I. Rau, K. M. Unruh, C. P. Swann, Z. S. Jawad, Terry Alford

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta_0.28Si_0.07N_0.65 starts to crystallize at about 900 °C. Ta_0.24Si_0.10N_0.66 and Ta_0.24Si_0.12N_0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.

Original language	English (US)
Pages (from-to)	19-21
Number of pages	3
Journal	Thin Solid Films
Volume	365
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(99)01113-X
State	Published - Apr 3 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(99)01113-X

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title = "Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films",

abstract = "The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C. Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.",

author = "Olowolafe, {J. O.} and I. Rau and Unruh, {K. M.} and Swann, {C. P.} and Jawad, {Z. S.} and Terry Alford",

note = "Funding Information: The authors are grateful to Richard Taylor who helped with XRD measurements. We are also thankful to Dan Aiken and Mike Dashiell for helpful discussions. This work is supported by the ARO under grant no DAAH04-95-1-0625 and support from the University of Delaware. ",

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doi = "10.1016/S0040-6090(99)01113-X",

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T1 - Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

AU - Olowolafe, J. O.

AU - Rau, I.

AU - Unruh, K. M.

AU - Swann, C. P.

AU - Jawad, Z. S.

AU - Alford, Terry

N1 - Funding Information: The authors are grateful to Richard Taylor who helped with XRD measurements. We are also thankful to Dan Aiken and Mike Dashiell for helpful discussions. This work is supported by the ARO under grant no DAAH04-95-1-0625 and support from the University of Delaware.

PY - 2000/4/3

Y1 - 2000/4/3

N2 - The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C. Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.

AB - The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C. Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.

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JO - Thin Solid Films

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Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

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