Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

J. O. Olowolafe, I. Rau, K. M. Unruh, C. P. Swann, Z. S. Jawad, Terry Alford

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C. Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.

Original languageEnglish (US)
Pages (from-to)19-21
Number of pages3
JournalThin Solid Films
Volume365
Issue number1
DOIs
StatePublished - Apr 3 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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