Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

J. O. Olowolafe, I. Rau, K. M. Unruh, C. P. Swann, Z. S. Jawad, Terry Alford

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C. Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.

Original languageEnglish (US)
Pages (from-to)19-21
Number of pages3
JournalThin Solid Films
Volume365
Issue number1
DOIs
StatePublished - Apr 3 2000

Fingerprint

Sheet resistance
Thermodynamic stability
thermal stability
electrical resistivity
Chemical analysis
Tantalum
Diffusion barriers
Rutherford backscattering spectroscopy
Silicon
Semiconductor devices
tantalum
semiconductor devices
Spectrometry
backscattering
heat treatment
Heat treatment
X ray diffraction
silicon
diffraction
spectroscopy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films. / Olowolafe, J. O.; Rau, I.; Unruh, K. M.; Swann, C. P.; Jawad, Z. S.; Alford, Terry.

In: Thin Solid Films, Vol. 365, No. 1, 03.04.2000, p. 19-21.

Research output: Contribution to journalArticle

Olowolafe, J. O. ; Rau, I. ; Unruh, K. M. ; Swann, C. P. ; Jawad, Z. S. ; Alford, Terry. / Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films. In: Thin Solid Films. 2000 ; Vol. 365, No. 1. pp. 19-21.
@article{37a94f74d27f438d82dc41c4e88003dc,
title = "Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films",
abstract = "The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C. Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.",
author = "Olowolafe, {J. O.} and I. Rau and Unruh, {K. M.} and Swann, {C. P.} and Jawad, {Z. S.} and Terry Alford",
year = "2000",
month = "4",
day = "3",
doi = "10.1016/S0040-6090(99)01113-X",
language = "English (US)",
volume = "365",
pages = "19--21",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

AU - Olowolafe, J. O.

AU - Rau, I.

AU - Unruh, K. M.

AU - Swann, C. P.

AU - Jawad, Z. S.

AU - Alford, Terry

PY - 2000/4/3

Y1 - 2000/4/3

N2 - The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C. Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.

AB - The role of composition on the resistivity and thermal stability of sputtered Ta-Si-N films have been studied using X-ray diffraction. Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C. Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 °C. In-situ sheet resistance measurement also showed that the sheet resistance for the alloys varies with composition and decreases with temperature. Our results indicate that Ta-Si-N films would find other applications in semiconductor devices, beside being used as a diffusion barrier.

UR - http://www.scopus.com/inward/record.url?scp=0033902132&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033902132&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)01113-X

DO - 10.1016/S0040-6090(99)01113-X

M3 - Article

AN - SCOPUS:0033902132

VL - 365

SP - 19

EP - 21

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -