Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted silicon

Supapan Seraphin, Stephen Krause, Peter Roitman, David S. Simons, Bernhard F. Cordts

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The effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon [separation by implantation of oxygen (SIMOX)] has been studied with transmission electron microscopy, electron energy-loss spectroscopy, and secondary ion mass spectroscopy. The rate of removal of oxide precipitates from the top silicon layer in SIMOX is higher during annealing in argon than in nitrogen. The removal is reduced in nitrogen due to the formation of an oxynitride complex at the precipitate surfaces which inhibits oxygen diffusion across the interfaces. Similar effects have been observed for oxide precipitation during nitrogen ambient annealing in bulk silicon.

Original languageEnglish (US)
Pages (from-to)3003-3005
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - Dec 1 1991


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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