Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted silicon

Supapan Seraphin; Stephen Krause; Peter Roitman; David S. Simons; Bernhard F. Cordts

doi:10.1063/1.105825

Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted silicon

Supapan Seraphin, Stephen Krause, Peter Roitman, David S. Simons, Bernhard F. Cordts

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5 Scopus citations

Abstract

The effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon [separation by implantation of oxygen (SIMOX)] has been studied with transmission electron microscopy, electron energy-loss spectroscopy, and secondary ion mass spectroscopy. The rate of removal of oxide precipitates from the top silicon layer in SIMOX is higher during annealing in argon than in nitrogen. The removal is reduced in nitrogen due to the formation of an oxynitride complex at the precipitate surfaces which inhibits oxygen diffusion across the interfaces. Similar effects have been observed for oxide precipitation during nitrogen ambient annealing in bulk silicon.

Original language	English (US)
Pages (from-to)	3003-3005
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	23
DOIs	https://doi.org/10.1063/1.105825
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.105825

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title = "Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted silicon",

abstract = "The effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon [separation by implantation of oxygen (SIMOX)] has been studied with transmission electron microscopy, electron energy-loss spectroscopy, and secondary ion mass spectroscopy. The rate of removal of oxide precipitates from the top silicon layer in SIMOX is higher during annealing in argon than in nitrogen. The removal is reduced in nitrogen due to the formation of an oxynitride complex at the precipitate surfaces which inhibits oxygen diffusion across the interfaces. Similar effects have been observed for oxide precipitation during nitrogen ambient annealing in bulk silicon.",

author = "Supapan Seraphin and Stephen Krause and Peter Roitman and Simons, {David S.} and Cordts, {Bernhard F.}",

year = "1991",

doi = "10.1063/1.105825",

language = "English (US)",

volume = "59",

pages = "3003--3005",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted silicon

AU - Seraphin, Supapan

AU - Krause, Stephen

AU - Roitman, Peter

AU - Simons, David S.

AU - Cordts, Bernhard F.

PY - 1991

Y1 - 1991

N2 - The effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon [separation by implantation of oxygen (SIMOX)] has been studied with transmission electron microscopy, electron energy-loss spectroscopy, and secondary ion mass spectroscopy. The rate of removal of oxide precipitates from the top silicon layer in SIMOX is higher during annealing in argon than in nitrogen. The removal is reduced in nitrogen due to the formation of an oxynitride complex at the precipitate surfaces which inhibits oxygen diffusion across the interfaces. Similar effects have been observed for oxide precipitation during nitrogen ambient annealing in bulk silicon.

AB - The effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon [separation by implantation of oxygen (SIMOX)] has been studied with transmission electron microscopy, electron energy-loss spectroscopy, and secondary ion mass spectroscopy. The rate of removal of oxide precipitates from the top silicon layer in SIMOX is higher during annealing in argon than in nitrogen. The removal is reduced in nitrogen due to the formation of an oxynitride complex at the precipitate surfaces which inhibits oxygen diffusion across the interfaces. Similar effects have been observed for oxide precipitation during nitrogen ambient annealing in bulk silicon.

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U2 - 10.1063/1.105825

DO - 10.1063/1.105825

M3 - Article

AN - SCOPUS:0343571542

SN - 0003-6951

VL - 59

SP - 3003

EP - 3005

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted silicon

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