Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures

D. F. Storm, D. S. Katzer, S. C. Binari, B. V. Shanabrook, Lin Zhou, David Smith

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

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Physics & Astronomy