Abstract
AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2/V s to greater than 1450 cm 2/V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3786-3788 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 17 |
| DOIs | |
| State | Published - Oct 25 2004 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures. / Storm, D. F.; Katzer, D. S.; Binari, S. C.; Shanabrook, B. V.; Zhou, Lin; Smith, David.
In: Applied Physics Letters, Vol. 85, No. 17, 25.10.2004, p. 3786-3788.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures
AU - Storm, D. F.
AU - Katzer, D. S.
AU - Binari, S. C.
AU - Shanabrook, B. V.
AU - Zhou, Lin
AU - Smith, David
PY - 2004/10/25
Y1 - 2004/10/25
N2 - AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2/V s to greater than 1450 cm 2/V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities.
AB - AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2/V s to greater than 1450 cm 2/V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities.
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U2 - 10.1063/1.1808496
DO - 10.1063/1.1808496
M3 - Article
AN - SCOPUS:9744231364
VL - 85
SP - 3786
EP - 3788
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 17
ER -