Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

D. Cherns; S. J. Henley; Fernando Ponce

doi:10.1063/1.1369610

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

D. Cherns, S. J. Henley, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

236 Scopus citations

Abstract

Transmission electron microscopy (TEM) and scanning electron microscope cathodoluminescence (CL) have been used to determine the influence of edge and screw dislocations on the light emitting properties of In_xGa_1-xN quantum wells. TEM is used to locate and identify the nature of dislocations. CL on the same samples is used to determine the spatial variation of the luminescence. A direct correlation of CL maps with TEM has been established, showing that threading edge dislocations act as nonradiative recombination centers with an associated minority carrier diffusion length of 200 nm. Threading dislocations of screw and mixed type were found to be associated with surface pits which were also nonradiative in the quantum well (QW) emission, but owing to the absence of QW growth on the pit facets. The contributions of edge and screw/mixed dislocations to the reduction of the QW emission are quantified, and the wider significance of these results is discussed.

Original language	English (US)
Pages (from-to)	2691-2693
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	18
DOIs	https://doi.org/10.1063/1.1369610
State	Published - Apr 30 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1369610

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@article{e350570ddb9848058ca5e400830b7b74,

title = "Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence",

abstract = "Transmission electron microscopy (TEM) and scanning electron microscope cathodoluminescence (CL) have been used to determine the influence of edge and screw dislocations on the light emitting properties of InxGa1-xN quantum wells. TEM is used to locate and identify the nature of dislocations. CL on the same samples is used to determine the spatial variation of the luminescence. A direct correlation of CL maps with TEM has been established, showing that threading edge dislocations act as nonradiative recombination centers with an associated minority carrier diffusion length of 200 nm. Threading dislocations of screw and mixed type were found to be associated with surface pits which were also nonradiative in the quantum well (QW) emission, but owing to the absence of QW growth on the pit facets. The contributions of edge and screw/mixed dislocations to the reduction of the QW emission are quantified, and the wider significance of these results is discussed.",

author = "D. Cherns and Henley, {S. J.} and Fernando Ponce",

year = "2001",

month = apr,

day = "30",

doi = "10.1063/1.1369610",

language = "English (US)",

volume = "78",

pages = "2691--2693",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

AU - Cherns, D.

AU - Henley, S. J.

AU - Ponce, Fernando

PY - 2001/4/30

Y1 - 2001/4/30

N2 - Transmission electron microscopy (TEM) and scanning electron microscope cathodoluminescence (CL) have been used to determine the influence of edge and screw dislocations on the light emitting properties of InxGa1-xN quantum wells. TEM is used to locate and identify the nature of dislocations. CL on the same samples is used to determine the spatial variation of the luminescence. A direct correlation of CL maps with TEM has been established, showing that threading edge dislocations act as nonradiative recombination centers with an associated minority carrier diffusion length of 200 nm. Threading dislocations of screw and mixed type were found to be associated with surface pits which were also nonradiative in the quantum well (QW) emission, but owing to the absence of QW growth on the pit facets. The contributions of edge and screw/mixed dislocations to the reduction of the QW emission are quantified, and the wider significance of these results is discussed.

AB - Transmission electron microscopy (TEM) and scanning electron microscope cathodoluminescence (CL) have been used to determine the influence of edge and screw dislocations on the light emitting properties of InxGa1-xN quantum wells. TEM is used to locate and identify the nature of dislocations. CL on the same samples is used to determine the spatial variation of the luminescence. A direct correlation of CL maps with TEM has been established, showing that threading edge dislocations act as nonradiative recombination centers with an associated minority carrier diffusion length of 200 nm. Threading dislocations of screw and mixed type were found to be associated with surface pits which were also nonradiative in the quantum well (QW) emission, but owing to the absence of QW growth on the pit facets. The contributions of edge and screw/mixed dislocations to the reduction of the QW emission are quantified, and the wider significance of these results is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0035971881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035971881&partnerID=8YFLogxK

U2 - 10.1063/1.1369610

DO - 10.1063/1.1369610

M3 - Article

AN - SCOPUS:0035971881

SN - 0003-6951

VL - 78

SP - 2691

EP - 2693

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Abstract

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