ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I

Processing

Prasad Alluri, Prashant Majhi, Derek Tang, Sandwip Dey

Research output: Chapter in Book/Report/Conference proceedingChapter

9 Citations (Scopus)

Abstract

SrTiO 3 (or ST) and (Ba, Sr)TiO 3 (or BST) thin films were deposited on Pt passivated Si substrates below 400°C, using β-diketonates of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization techniques including TEM and SEM. To optimize the processing parameters with respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390°C), unannealed ST films exhibited a permittivity of 120 and an ohmic contact with the bottom Pt electrode. The former was attributed to the small grain size (150-200 A) and presence of Sr rich second phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages305-318
Number of pages14
Volume21
Edition1-4
StatePublished - 1998

Fingerprint

Electron cyclotron resonance
Metallorganic chemical vapor deposition
electron cyclotron resonance
metalorganic chemical vapor deposition
Permittivity
liquid injection
permittivity
Thin films
Ohmic contacts
experiment design
Film growth
Plasma enhanced chemical vapor deposition
thin films
Processing
Design of experiments
electric contacts
purity
Nucleation
grain size
vapor deposition

Keywords

  • (Ba,Sr)TiO
  • CVD
  • Design of experiments
  • Direct liquid injection
  • ECR
  • SrTiO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Alluri, P., Majhi, P., Tang, D., & Dey, S. (1998). ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing. In Integrated Ferroelectrics (1-4 ed., Vol. 21, pp. 305-318)

ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I : Processing. / Alluri, Prasad; Majhi, Prashant; Tang, Derek; Dey, Sandwip.

Integrated Ferroelectrics. Vol. 21 1-4. ed. 1998. p. 305-318.

Research output: Chapter in Book/Report/Conference proceedingChapter

Alluri, P, Majhi, P, Tang, D & Dey, S 1998, ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing. in Integrated Ferroelectrics. 1-4 edn, vol. 21, pp. 305-318.
Alluri P, Majhi P, Tang D, Dey S. ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing. In Integrated Ferroelectrics. 1-4 ed. Vol. 21. 1998. p. 305-318
Alluri, Prasad ; Majhi, Prashant ; Tang, Derek ; Dey, Sandwip. / ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I : Processing. Integrated Ferroelectrics. Vol. 21 1-4. ed. 1998. pp. 305-318
@inbook{877055909586461bada81e192e9e978e,
title = "ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing",
abstract = "SrTiO 3 (or ST) and (Ba, Sr)TiO 3 (or BST) thin films were deposited on Pt passivated Si substrates below 400°C, using β-diketonates of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization techniques including TEM and SEM. To optimize the processing parameters with respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390°C), unannealed ST films exhibited a permittivity of 120 and an ohmic contact with the bottom Pt electrode. The former was attributed to the small grain size (150-200 A) and presence of Sr rich second phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth.",
keywords = "(Ba,Sr)TiO, CVD, Design of experiments, Direct liquid injection, ECR, SrTiO",
author = "Prasad Alluri and Prashant Majhi and Derek Tang and Sandwip Dey",
year = "1998",
language = "English (US)",
volume = "21",
pages = "305--318",
booktitle = "Integrated Ferroelectrics",
edition = "1-4",

}

TY - CHAP

T1 - ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I

T2 - Processing

AU - Alluri, Prasad

AU - Majhi, Prashant

AU - Tang, Derek

AU - Dey, Sandwip

PY - 1998

Y1 - 1998

N2 - SrTiO 3 (or ST) and (Ba, Sr)TiO 3 (or BST) thin films were deposited on Pt passivated Si substrates below 400°C, using β-diketonates of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization techniques including TEM and SEM. To optimize the processing parameters with respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390°C), unannealed ST films exhibited a permittivity of 120 and an ohmic contact with the bottom Pt electrode. The former was attributed to the small grain size (150-200 A) and presence of Sr rich second phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth.

AB - SrTiO 3 (or ST) and (Ba, Sr)TiO 3 (or BST) thin films were deposited on Pt passivated Si substrates below 400°C, using β-diketonates of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization techniques including TEM and SEM. To optimize the processing parameters with respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390°C), unannealed ST films exhibited a permittivity of 120 and an ohmic contact with the bottom Pt electrode. The former was attributed to the small grain size (150-200 A) and presence of Sr rich second phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth.

KW - (Ba,Sr)TiO

KW - CVD

KW - Design of experiments

KW - Direct liquid injection

KW - ECR

KW - SrTiO

UR - http://www.scopus.com/inward/record.url?scp=11544304331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11544304331&partnerID=8YFLogxK

M3 - Chapter

VL - 21

SP - 305

EP - 318

BT - Integrated Ferroelectrics

ER -