ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing

Prasad Alluri, Prashant Majhi, Derek Tang, Sandwip Dey

Research output: Chapter in Book/Report/Conference proceedingChapter

9 Scopus citations

Abstract

SrTiO 3 (or ST) and (Ba, Sr)TiO 3 (or BST) thin films were deposited on Pt passivated Si substrates below 400°C, using β-diketonates of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization techniques including TEM and SEM. To optimize the processing parameters with respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390°C), unannealed ST films exhibited a permittivity of 120 and an ohmic contact with the bottom Pt electrode. The former was attributed to the small grain size (150-200 A) and presence of Sr rich second phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages305-318
Number of pages14
Volume21
Edition1-4
StatePublished - 1998

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Keywords

  • (Ba,Sr)TiO
  • CVD
  • Design of experiments
  • Direct liquid injection
  • ECR
  • SrTiO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Alluri, P., Majhi, P., Tang, D., & Dey, S. (1998). ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing. In Integrated Ferroelectrics (1-4 ed., Vol. 21, pp. 305-318)