Dysprosium silicide nanowires on Si(110)

Zhian He, M. Stevens, David Smith, Peter Bennett

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Dysprosium silicide was observed to form nanowires (NW) on Si(110) with a single orientation and a narrow, well-defined width. The single orientation and the NW shape were found to be dictated by the twofold symmetry of the substrate. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side. This type of growth represents a physical mechanism for self-assembled NW formation that does not require lattice mismatch.

Original languageEnglish (US)
Pages (from-to)5292-5294
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number25
DOIs
StatePublished - Dec 22 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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