Dynamics of localized excitons in InGaN/GaN quantum wells

Hongbin Yu, H. Htoon, Alex DeLozanne, C. K. Shih, P. A. Grudowski, R. D. Dupuis, K. Zeng, R. Mair, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

By using a "nanoscale aperture" method, we studied the dynamics of localized excitons in active InGaN layers in an InGaN/GaN multiple quantum well (MQW). Local photoluminescence (PL) from local excitation shows very different characteristics from far-field luminescence. PL spectra from these nanoapertures are, in general, blueshifted relative to the spectra acquired in the unmasked regions. The spectra vary from aperture to aperture, reflecting the spatial fluctuation of the In composition in the MQW. In addition, one typically observes spectra with clearly resolved multiple peaks from the small apertures, which may be attributed to compositional and size fluctuations over a length scale longer than the exciton diameter but smaller than the aperture size. The excitation intensity dependence of PL indicates a band-filling effect in the multiple-peak structure. Finally, time-resolved studies reveal a very interesting spectral weight shifting between the higher energy peaks and the lower-energy peaks.

Original languageEnglish (US)
Pages (from-to)2215-2217
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
StatePublished - Jul 1998
Externally publishedYes

Fingerprint

Excitons
Semiconductor quantum wells
Photoluminescence
apertures
excitons
quantum wells
Time and motion study
photoluminescence
Luminescence
excitation
far fields
Chemical analysis
luminescence
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Yu, H., Htoon, H., DeLozanne, A., Shih, C. K., Grudowski, P. A., Dupuis, R. D., ... Jiang, H. X. (1998). Dynamics of localized excitons in InGaN/GaN quantum wells. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(4), 2215-2217.

Dynamics of localized excitons in InGaN/GaN quantum wells. / Yu, Hongbin; Htoon, H.; DeLozanne, Alex; Shih, C. K.; Grudowski, P. A.; Dupuis, R. D.; Zeng, K.; Mair, R.; Lin, J. Y.; Jiang, H. X.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 4, 07.1998, p. 2215-2217.

Research output: Contribution to journalArticle

Yu, H, Htoon, H, DeLozanne, A, Shih, CK, Grudowski, PA, Dupuis, RD, Zeng, K, Mair, R, Lin, JY & Jiang, HX 1998, 'Dynamics of localized excitons in InGaN/GaN quantum wells', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 16, no. 4, pp. 2215-2217.
Yu, Hongbin ; Htoon, H. ; DeLozanne, Alex ; Shih, C. K. ; Grudowski, P. A. ; Dupuis, R. D. ; Zeng, K. ; Mair, R. ; Lin, J. Y. ; Jiang, H. X. / Dynamics of localized excitons in InGaN/GaN quantum wells. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 ; Vol. 16, No. 4. pp. 2215-2217.
@article{51824b28ddf742f49fc20f421e625435,
title = "Dynamics of localized excitons in InGaN/GaN quantum wells",
abstract = "By using a {"}nanoscale aperture{"} method, we studied the dynamics of localized excitons in active InGaN layers in an InGaN/GaN multiple quantum well (MQW). Local photoluminescence (PL) from local excitation shows very different characteristics from far-field luminescence. PL spectra from these nanoapertures are, in general, blueshifted relative to the spectra acquired in the unmasked regions. The spectra vary from aperture to aperture, reflecting the spatial fluctuation of the In composition in the MQW. In addition, one typically observes spectra with clearly resolved multiple peaks from the small apertures, which may be attributed to compositional and size fluctuations over a length scale longer than the exciton diameter but smaller than the aperture size. The excitation intensity dependence of PL indicates a band-filling effect in the multiple-peak structure. Finally, time-resolved studies reveal a very interesting spectral weight shifting between the higher energy peaks and the lower-energy peaks.",
author = "Hongbin Yu and H. Htoon and Alex DeLozanne and Shih, {C. K.} and Grudowski, {P. A.} and Dupuis, {R. D.} and K. Zeng and R. Mair and Lin, {J. Y.} and Jiang, {H. X.}",
year = "1998",
month = "7",
language = "English (US)",
volume = "16",
pages = "2215--2217",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Dynamics of localized excitons in InGaN/GaN quantum wells

AU - Yu, Hongbin

AU - Htoon, H.

AU - DeLozanne, Alex

AU - Shih, C. K.

AU - Grudowski, P. A.

AU - Dupuis, R. D.

AU - Zeng, K.

AU - Mair, R.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 1998/7

Y1 - 1998/7

N2 - By using a "nanoscale aperture" method, we studied the dynamics of localized excitons in active InGaN layers in an InGaN/GaN multiple quantum well (MQW). Local photoluminescence (PL) from local excitation shows very different characteristics from far-field luminescence. PL spectra from these nanoapertures are, in general, blueshifted relative to the spectra acquired in the unmasked regions. The spectra vary from aperture to aperture, reflecting the spatial fluctuation of the In composition in the MQW. In addition, one typically observes spectra with clearly resolved multiple peaks from the small apertures, which may be attributed to compositional and size fluctuations over a length scale longer than the exciton diameter but smaller than the aperture size. The excitation intensity dependence of PL indicates a band-filling effect in the multiple-peak structure. Finally, time-resolved studies reveal a very interesting spectral weight shifting between the higher energy peaks and the lower-energy peaks.

AB - By using a "nanoscale aperture" method, we studied the dynamics of localized excitons in active InGaN layers in an InGaN/GaN multiple quantum well (MQW). Local photoluminescence (PL) from local excitation shows very different characteristics from far-field luminescence. PL spectra from these nanoapertures are, in general, blueshifted relative to the spectra acquired in the unmasked regions. The spectra vary from aperture to aperture, reflecting the spatial fluctuation of the In composition in the MQW. In addition, one typically observes spectra with clearly resolved multiple peaks from the small apertures, which may be attributed to compositional and size fluctuations over a length scale longer than the exciton diameter but smaller than the aperture size. The excitation intensity dependence of PL indicates a band-filling effect in the multiple-peak structure. Finally, time-resolved studies reveal a very interesting spectral weight shifting between the higher energy peaks and the lower-energy peaks.

UR - http://www.scopus.com/inward/record.url?scp=0342705775&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342705775&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0342705775

VL - 16

SP - 2215

EP - 2217

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -