Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy

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Abstract

The phonon dynamics of both the A1 (LO) and the E1 (LO) phonons in InN has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale. From the temperature-dependence of their lifetimes, we demonstrate that both phonons decay primarily into a large wavevector TO phonon and a large wavevector TA/LA phonon consistent with the accepted phonon dispersion relationship for wurtzite InN. Their lifetimes have been found to decrease from 2.2 ps, at the low electron-hole pair density of5×10 17 cm-3 to 0.25 ps, at the highest density of 2×1019 cm-3. Our experimental findings demonstrate that carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages7-20
Number of pages14
Volume1221
Publication statusPublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 4 2009

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/4/09

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Keywords

  • InN
  • LO phonon lifetimes
  • Time-resolved Raman spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Tsen, K-T. (2010). Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy. In Materials Research Society Symposium Proceedings (Vol. 1221, pp. 7-20)