Abstract
A new control system design is proposed for the Czochralski process in order to improve crystal quality, particularly GaAs. An expanded set of formal control objectives are proposed based on a considerations of defect formation, segregation, and the process coupling. A control structure is developed that meets the control objectives and the restrictions posed by the batch related disturbances, system coupling, and the dynamic characteristics of the measurements, outputs, and inputs.
Original language | English (US) |
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Pages (from-to) | 199-217 |
Number of pages | 19 |
Journal | Journal of Crystal Growth |
Volume | 91 |
Issue number | 1-2 |
DOIs | |
State | Published - Aug 1 1988 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry