Dynamic screening for ionized impurity scattering in degenerate semiconductors

Wei Ye Chung; D. K. Ferry

doi:10.1016/0038-1101(88)90100-1

Dynamic screening for ionized impurity scattering in degenerate semiconductors

Wei Ye Chung, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The relaxation time of ionized impurity scattering is formulated by taking into account the dynamic screening of the impurities by the electrons in degenerate semiconductors. This formula for ionized impurity scattering is used to calculate the low-field drift mobility with Rode's method for the cases of electrons in GaAs and InP.

Original language	English (US)
Pages (from-to)	1369-1374
Number of pages	6
Journal	Solid State Electronics
Volume	31
Issue number	9
DOIs	https://doi.org/10.1016/0038-1101(88)90100-1
State	Published - Sep 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(88)90100-1

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title = "Dynamic screening for ionized impurity scattering in degenerate semiconductors",

abstract = "The relaxation time of ionized impurity scattering is formulated by taking into account the dynamic screening of the impurities by the electrons in degenerate semiconductors. This formula for ionized impurity scattering is used to calculate the low-field drift mobility with Rode's method for the cases of electrons in GaAs and InP.",

author = "Chung, {Wei Ye} and Ferry, {D. K.}",

year = "1988",

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doi = "10.1016/0038-1101(88)90100-1",

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AU - Chung, Wei Ye

AU - Ferry, D. K.

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N2 - The relaxation time of ionized impurity scattering is formulated by taking into account the dynamic screening of the impurities by the electrons in degenerate semiconductors. This formula for ionized impurity scattering is used to calculate the low-field drift mobility with Rode's method for the cases of electrons in GaAs and InP.

AB - The relaxation time of ionized impurity scattering is formulated by taking into account the dynamic screening of the impurities by the electrons in degenerate semiconductors. This formula for ionized impurity scattering is used to calculate the low-field drift mobility with Rode's method for the cases of electrons in GaAs and InP.

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

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Dynamic screening for ionized impurity scattering in degenerate semiconductors

Abstract

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