Dynamic screening for ionized impurity scattering in degenerate semiconductors

Wei Ye Chung, D. K. Ferry

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The relaxation time of ionized impurity scattering is formulated by taking into account the dynamic screening of the impurities by the electrons in degenerate semiconductors. This formula for ionized impurity scattering is used to calculate the low-field drift mobility with Rode's method for the cases of electrons in GaAs and InP.

Original languageEnglish (US)
Pages (from-to)1369-1374
Number of pages6
JournalSolid State Electronics
Volume31
Issue number9
DOIs
StatePublished - 1988

Fingerprint

Screening
screening
Scattering
Impurities
Semiconductor materials
impurities
scattering
Electrons
Relaxation time
electrons
relaxation time
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Dynamic screening for ionized impurity scattering in degenerate semiconductors. / Chung, Wei Ye; Ferry, D. K.

In: Solid State Electronics, Vol. 31, No. 9, 1988, p. 1369-1374.

Research output: Contribution to journalArticle

Chung, Wei Ye ; Ferry, D. K. / Dynamic screening for ionized impurity scattering in degenerate semiconductors. In: Solid State Electronics. 1988 ; Vol. 31, No. 9. pp. 1369-1374.
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