The relaxation time of ionized impurity scattering is formulated by taking into account the dynamic screening of the impurities by the electrons in degenerate semiconductors. This formula for ionized impurity scattering is used to calculate the low-field drift mobility with Rode's method for the cases of electrons in GaAs and InP.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry