Dynamic screening for ionized impurity scattering in degenerate semiconductors

Wei Ye Chung, D. K. Ferry

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The relaxation time of ionized impurity scattering is formulated by taking into account the dynamic screening of the impurities by the electrons in degenerate semiconductors. This formula for ionized impurity scattering is used to calculate the low-field drift mobility with Rode's method for the cases of electrons in GaAs and InP.

Original languageEnglish (US)
Pages (from-to)1369-1374
Number of pages6
JournalSolid State Electronics
Volume31
Issue number9
DOIs
StatePublished - Sep 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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