Abstract
Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.
Original language | English (US) |
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Pages (from-to) | 127-131 |
Number of pages | 5 |
Journal | Nature |
Volume | 298 |
Issue number | 5870 |
DOIs | |
State | Published - Jan 1 1982 |
Externally published | Yes |
ASJC Scopus subject areas
- General