Dynamic observation of defect annealing in CdTe at lattice resolution

R. Sinclair; F. A. Ponce; T. Yamashita; David J. Smith; R. A. Camps; L. A. Freeman; S. J. Erasmus; W. C. Nixon; K. C.A. Smith; C. J.D. Catto

doi:10.1038/298127a0

Dynamic observation of defect annealing in CdTe at lattice resolution

R. Sinclair, F. A. Ponce, T. Yamashita, David J. Smith, R. A. Camps, L. A. Freeman, S. J. Erasmus, W. C. Nixon, K. C.A. Smith, C. J.D. Catto

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Abstract

Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.

Original language	English (US)
Pages (from-to)	127-131
Number of pages	5
Journal	Nature
Volume	298
Issue number	5870
DOIs	https://doi.org/10.1038/298127a0
State	Published - Jan 1 1982
Externally published	Yes

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title = "Dynamic observation of defect annealing in CdTe at lattice resolution",

abstract = "Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.",

author = "R. Sinclair and Ponce, {F. A.} and T. Yamashita and Smith, {David J.} and Camps, {R. A.} and Freeman, {L. A.} and Erasmus, {S. J.} and Nixon, {W. C.} and Smith, {K. C.A.} and Catto, {C. J.D.}",

year = "1982",

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doi = "10.1038/298127a0",

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T1 - Dynamic observation of defect annealing in CdTe at lattice resolution

AU - Sinclair, R.

AU - Ponce, F. A.

AU - Yamashita, T.

AU - Smith, David J.

AU - Camps, R. A.

AU - Freeman, L. A.

AU - Erasmus, S. J.

AU - Nixon, W. C.

AU - Smith, K. C.A.

AU - Catto, C. J.D.

PY - 1982/1/1

Y1 - 1982/1/1

N2 - Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.

AB - Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.

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Dynamic observation of defect annealing in CdTe at lattice resolution

Abstract

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