Dynamic minority-carrier storage in TRAPATT diodes

Richard A. Kiehl

doi:10.1016/0038-1101(80)90005-2

Dynamic minority-carrier storage in TRAPATT diodes

Richard A. Kiehl

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The occurrence of a dynamic storage of minority carriers in the highly-doped boundary regions of a TRAPATT diode and the subsequent release of these carriers into the diode's depletion region is verified for the first time in detailed computer simulations of the diode's internal dynamics. The simulations were carried out by numerical solution of the carrier transport equations in a p⁺-n-n⁺ silicon diode having a deep-diffused doping profile typical of experimental devices. The results show that it is this storage process, and not thermal generation, that controls the carrier avalanche even in very gradually graded structures. The dynamics of this phenomenon are described in detail and the implications of the results on TRAPATT oscillator performance are discussed.

Original language	English (US)
Pages (from-to)	217-222
Number of pages	6
Journal	Solid State Electronics
Volume	23
Issue number	3
DOIs	https://doi.org/10.1016/0038-1101(80)90005-2
State	Published - Mar 1980
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0038-1101(80)90005-2

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title = "Dynamic minority-carrier storage in TRAPATT diodes",

abstract = "The occurrence of a dynamic storage of minority carriers in the highly-doped boundary regions of a TRAPATT diode and the subsequent release of these carriers into the diode's depletion region is verified for the first time in detailed computer simulations of the diode's internal dynamics. The simulations were carried out by numerical solution of the carrier transport equations in a p+-n-n+ silicon diode having a deep-diffused doping profile typical of experimental devices. The results show that it is this storage process, and not thermal generation, that controls the carrier avalanche even in very gradually graded structures. The dynamics of this phenomenon are described in detail and the implications of the results on TRAPATT oscillator performance are discussed.",

author = "Kiehl, {Richard A.}",

note = "Funding Information: tThis work was supported by the United States Department of Energy (DOE) under contract number DE-ACtM-76-DPO0789. $A United States Department of Energy Facility.",

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doi = "10.1016/0038-1101(80)90005-2",

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AU - Kiehl, Richard A.

N1 - Funding Information: tThis work was supported by the United States Department of Energy (DOE) under contract number DE-ACtM-76-DPO0789. $A United States Department of Energy Facility.

PY - 1980/3

Y1 - 1980/3

N2 - The occurrence of a dynamic storage of minority carriers in the highly-doped boundary regions of a TRAPATT diode and the subsequent release of these carriers into the diode's depletion region is verified for the first time in detailed computer simulations of the diode's internal dynamics. The simulations were carried out by numerical solution of the carrier transport equations in a p+-n-n+ silicon diode having a deep-diffused doping profile typical of experimental devices. The results show that it is this storage process, and not thermal generation, that controls the carrier avalanche even in very gradually graded structures. The dynamics of this phenomenon are described in detail and the implications of the results on TRAPATT oscillator performance are discussed.

AB - The occurrence of a dynamic storage of minority carriers in the highly-doped boundary regions of a TRAPATT diode and the subsequent release of these carriers into the diode's depletion region is verified for the first time in detailed computer simulations of the diode's internal dynamics. The simulations were carried out by numerical solution of the carrier transport equations in a p+-n-n+ silicon diode having a deep-diffused doping profile typical of experimental devices. The results show that it is this storage process, and not thermal generation, that controls the carrier avalanche even in very gradually graded structures. The dynamics of this phenomenon are described in detail and the implications of the results on TRAPATT oscillator performance are discussed.

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Dynamic minority-carrier storage in TRAPATT diodes

Abstract

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