Dry ex situ cleaning processes for (0001)Si 6H-SiC surfaces

Sean W. King, Robert Nemanich, Robert F. Davis

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A completely dry ex situ cleaning process based on UV/O3 oxidation and HF vapor exposure for removal of residual C and oxide, respectively, from (0001)Si [the silicon-terminated surface of SiC] 6H-SiC surfaces to levels equivalent to or better than conventional wet chemical ex situ processing has been demonstrated. X-ray photoelectron spectroscopy (XPS) of surfaces exposed to UV-generated ozone revealed the formation of carbon and silicon oxides, as indicated by the broad Si-O Si 2p peak at 102.4 eV (full width at half-maximum = 2.1 eV) and a shift in the surface C 1s peak from 283.6 to 284.2 eV, respectively. Evidence for a reduction in the amount of surface C was shown by an increase in the ratio of the SiC C peak to the surface C peak from 0.8 to 2.7 after the UV/O3 treatment. Removal of the UV/O3 silicon oxide via exposure to the vapor from a 10:1 buffered HF solution was indicated by the absence (below the XPS detection limit) of the Si-O Si 2p peak at 102.4 eV. However, this last process results in a F-terminated surface.

Original languageEnglish (US)
Pages (from-to)2648-2651
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number7
DOIs
StatePublished - Jul 1999
Externally publishedYes

Fingerprint

cleaning
Cleaning
Silicon oxides
silicon oxides
X ray photoelectron spectroscopy
Vapors
photoelectron spectroscopy
vapors
oxides
Ozone
Silicon
Full width at half maximum
Oxides
ozone
x rays
Carbon
Oxidation
oxidation
carbon
shift

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Dry ex situ cleaning processes for (0001)Si 6H-SiC surfaces. / King, Sean W.; Nemanich, Robert; Davis, Robert F.

In: Journal of the Electrochemical Society, Vol. 146, No. 7, 07.1999, p. 2648-2651.

Research output: Contribution to journalArticle

King, Sean W. ; Nemanich, Robert ; Davis, Robert F. / Dry ex situ cleaning processes for (0001)Si 6H-SiC surfaces. In: Journal of the Electrochemical Society. 1999 ; Vol. 146, No. 7. pp. 2648-2651.
@article{f548b529ae79489198b9d8fa6298a809,
title = "Dry ex situ cleaning processes for (0001)Si 6H-SiC surfaces",
abstract = "A completely dry ex situ cleaning process based on UV/O3 oxidation and HF vapor exposure for removal of residual C and oxide, respectively, from (0001)Si [the silicon-terminated surface of SiC] 6H-SiC surfaces to levels equivalent to or better than conventional wet chemical ex situ processing has been demonstrated. X-ray photoelectron spectroscopy (XPS) of surfaces exposed to UV-generated ozone revealed the formation of carbon and silicon oxides, as indicated by the broad Si-O Si 2p peak at 102.4 eV (full width at half-maximum = 2.1 eV) and a shift in the surface C 1s peak from 283.6 to 284.2 eV, respectively. Evidence for a reduction in the amount of surface C was shown by an increase in the ratio of the SiC C peak to the surface C peak from 0.8 to 2.7 after the UV/O3 treatment. Removal of the UV/O3 silicon oxide via exposure to the vapor from a 10:1 buffered HF solution was indicated by the absence (below the XPS detection limit) of the Si-O Si 2p peak at 102.4 eV. However, this last process results in a F-terminated surface.",
author = "King, {Sean W.} and Robert Nemanich and Davis, {Robert F.}",
year = "1999",
month = "7",
doi = "10.1149/1.1391986",
language = "English (US)",
volume = "146",
pages = "2648--2651",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "7",

}

TY - JOUR

T1 - Dry ex situ cleaning processes for (0001)Si 6H-SiC surfaces

AU - King, Sean W.

AU - Nemanich, Robert

AU - Davis, Robert F.

PY - 1999/7

Y1 - 1999/7

N2 - A completely dry ex situ cleaning process based on UV/O3 oxidation and HF vapor exposure for removal of residual C and oxide, respectively, from (0001)Si [the silicon-terminated surface of SiC] 6H-SiC surfaces to levels equivalent to or better than conventional wet chemical ex situ processing has been demonstrated. X-ray photoelectron spectroscopy (XPS) of surfaces exposed to UV-generated ozone revealed the formation of carbon and silicon oxides, as indicated by the broad Si-O Si 2p peak at 102.4 eV (full width at half-maximum = 2.1 eV) and a shift in the surface C 1s peak from 283.6 to 284.2 eV, respectively. Evidence for a reduction in the amount of surface C was shown by an increase in the ratio of the SiC C peak to the surface C peak from 0.8 to 2.7 after the UV/O3 treatment. Removal of the UV/O3 silicon oxide via exposure to the vapor from a 10:1 buffered HF solution was indicated by the absence (below the XPS detection limit) of the Si-O Si 2p peak at 102.4 eV. However, this last process results in a F-terminated surface.

AB - A completely dry ex situ cleaning process based on UV/O3 oxidation and HF vapor exposure for removal of residual C and oxide, respectively, from (0001)Si [the silicon-terminated surface of SiC] 6H-SiC surfaces to levels equivalent to or better than conventional wet chemical ex situ processing has been demonstrated. X-ray photoelectron spectroscopy (XPS) of surfaces exposed to UV-generated ozone revealed the formation of carbon and silicon oxides, as indicated by the broad Si-O Si 2p peak at 102.4 eV (full width at half-maximum = 2.1 eV) and a shift in the surface C 1s peak from 283.6 to 284.2 eV, respectively. Evidence for a reduction in the amount of surface C was shown by an increase in the ratio of the SiC C peak to the surface C peak from 0.8 to 2.7 after the UV/O3 treatment. Removal of the UV/O3 silicon oxide via exposure to the vapor from a 10:1 buffered HF solution was indicated by the absence (below the XPS detection limit) of the Si-O Si 2p peak at 102.4 eV. However, this last process results in a F-terminated surface.

UR - http://www.scopus.com/inward/record.url?scp=0032686340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032686340&partnerID=8YFLogxK

U2 - 10.1149/1.1391986

DO - 10.1149/1.1391986

M3 - Article

AN - SCOPUS:0032686340

VL - 146

SP - 2648

EP - 2651

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 7

ER -