Droop improvement in high current range on PSS-LEDs

S. Tanaka, Y. Zhao, I. Koslow, C. C. Pan, H. T. Chen, J. Sonoda, S. P. Denbaars, S. Nakamura

Research output: Contribution to journalArticle

20 Scopus citations


The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6. At a wavelength of 447nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6mW and an EQE of 49.7 at a current of 20mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.

Original languageEnglish (US)
Pages (from-to)335-336
Number of pages2
JournalElectronics Letters
Issue number5
StatePublished - Mar 3 2011
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tanaka, S., Zhao, Y., Koslow, I., Pan, C. C., Chen, H. T., Sonoda, J., Denbaars, S. P., & Nakamura, S. (2011). Droop improvement in high current range on PSS-LEDs. Electronics Letters, 47(5), 335-336. https://doi.org/10.1049/el.2010.3306